Cleaning liquid for removing photoresist residues

Abstract

The invention provides cleaning liquid for removing photoresist residues and constitution of the cleaning liquid. The cleaning liquid for removing the photoresist residues contains sulfolane, diglycolamine and an auxiliary solvent. The cleaning liquid for removing the photoresist residues does not contain water, hydroxylamine or fluorides, can clean the difficultly-removed photoresist residues on a wafer under high operating temperature without corroding base materials such as metals comprising aluminum, silver, titanium and tungsten and non metals comprising silicon dioxide, gallium nitride and the like, and has a good application prospect in the fields of semiconductor and LED (light emitting diode) wafer cleaning and the like.

Description

technical field [0001] The invention relates to a cleaning solution, more specifically to a cleaning solution for removing photoresist residues. Background technique [0002] In the usual LED and semiconductor manufacturing processes, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be stripped before the next process. Engraving. This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. Improving the removal ability of photoresist has always been the priority direction of efforts to improve photore...

AI Technical Summary

Problems solved by technology

However, the solvent system selected for this type of cleaning solution has a low flash point, and its

Images