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Nonvolatile memory apparatus

A non-volatile storage and memory unit technology, applied in information storage, static memory, read-only memory, etc., can solve the problems of increased current consumption, long time, etc.

Inactive Publication Date: 2014-06-25
SK HYNIX INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it takes a lot of time, and the current consumption increases significantly

Method used

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Embodiment Construction

[0024] Hereinafter, a nonvolatile memory device according to the present invention will be described by way of exemplary embodiments with reference to the accompanying drawings.

[0025] see image 3 , the nonvolatile memory device 1 may include a memory unit 110 and a read drive block RDB. although image 3 One memory cell is shown, but memory cell 110 may include multiple memory cells. The memory unit 110 may include a switching device and a resistance variable device connected to the switching device to store data according to a change in resistance value. The switching device may be a diode to cause current to flow in one direction. A resistance variable device may be a substantial memory layer, for example, a resistance variable memory may include: a PCMO layer being a material for ReRAM, a chalcogenide layer being a PCRAM material, a magnetic layer being a MRAM material, being Reverse magnetization device layers for spin-transfer torque magnetoresistive RAM (STTMRAM)...

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Abstract

A nonvolatile memory apparatus includes a read driver. The read driver unit is configured to apply read current to a memory cell in a normal read operation for outputting data stored in the memory cell, and apply refresh current larger than the read current to the memory cell in a refresh operation.

Description

[0001] Cross References to Related Applications [0002] This application claims priority from Korean Patent Application No. 10-2012-0150162 filed with the Korean Intellectual Property Office on December 21, 2012, the entire contents of which are hereby incorporated by reference. technical field [0003] Various embodiments relate generally to a semiconductor device, and more particularly, to a memory device including nonvolatile memory cells. Background technique [0004] A DRAM, as a general semiconductor memory device, includes a memory cell array composed of switching elements and capacitors, and stores data by charging or discharging the capacitors. DRAM is widely utilized because it operates at extremely high speeds. However, DRAM has characteristics of volatile memory due to characteristics of memory cells composed of capacitors. Next-generation memory devices that can guarantee the maximum operation rate and have the characteristics of nonvolatile memory have been ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C13/00
CPCG11C13/0007G11C13/0004G11C13/0033G11C13/004G11C13/0038G11C13/0069G11C16/26G11C16/30G11C13/00
Inventor 金东槿
Owner SK HYNIX INC