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Electrostatic Chuck

An electrostatic chuck and electrode technology, which is applied in the field of semiconductor processing, can solve problems affecting the uniformity of critical dimensions and uneven etching of substrates, etc.

Active Publication Date: 2017-11-21
APPLIED MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The inventors have further found that such deflection of the plasma sheath causes the trajectory of the ions bombarding the substrate to be different near the edge of the substrate compared to the center of the substrate, thereby causing uneven etching of the substrate, thus affecting the overall critical dimension. Uniformity

Method used

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  • Electrostatic Chuck
  • Electrostatic Chuck
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Experimental program
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Embodiment Construction

[0011] Embodiments of the invention provide electrostatic chucks for processing substrates. The electrostatic chuck of the present invention can advantageously help to generate a uniform electromagnetic field over a substrate disposed atop the electrostatic chuck during a plasma processing process, such as an etch process, thereby reducing or eliminating the formation of a plasma over the substrate. The deflection of the body sheath prevents uneven etching of the substrate. The electrostatic chuck of the present invention may further advantageously provide a uniform temperature gradient near the edge of the substrate, thereby reducing temperature-related process non-uniformity and providing improved CD uniformity compared to conventionally used electrostatic chucks. The inventors have observed that the apparatus of the present invention is particularly useful in a number of applications such as etch process chambers used in the fabrication of devices in 32nm node technology (a...

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PUM

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Abstract

Examples of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck for supporting and holding a substrate having a given width may include: a dielectric member having a support surface configured to support a substrate having a given width; electrodes, disposed within the dielectric member below the support surface and extending outward from the center of the dielectric member to a region beyond the outer perimeter of the substrate, the outer perimeter being bounded by the given width of the substrate; an RF power source , coupled to the electrode; and a DC power source, coupled to the electrode.

Description

technical field [0001] Embodiments of the invention generally relate to the processing of semiconductors. Background technique [0002] The inventors have observed that conventional electrostatic chucks used to hold substrates in plasma processing chambers, such as etch chambers, may produce process non-uniformities near the edges of the substrate. Such process non-uniformity is generally caused by differences in the electrical and thermal properties of the materials and substrates used to manufacture the components of the electrostatic chuck, such as the processing kit. Furthermore, the inventors have observed that conventional electrostatic chucks generally generate a non-uniform electromagnetic field above the substrate that induces the plasma to be formed to have a plasma sheath that The sheath bends toward the substrate near the edge of the substrate. The inventors have further found that such deflection of the plasma sheath causes the trajectory of the ions bombardin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683H02N13/00B23Q3/15
CPCH01J37/32715H01L21/6831H02N13/00
Inventor S·巴纳V·托多罗D·卢博米尔斯基
Owner APPLIED MATERIALS INC