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A method for testing the Seebeck coefficient of a film-shaped thermoelectric material and its testing device

A thermoelectric material and testing device technology, applied in the direction of material thermal development, etc., can solve the problems of large testing error, poor contact between electrodes and film-like thermoelectric materials, etc., and achieve the effects of avoiding measurement errors, simple structure and strong flexibility

Active Publication Date: 2016-12-28
EAST CHINA UNIV OF SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method that can accurately collect the temperature at both ends of the sample to be tested and the thermoelectric potential at the corresponding position, thereby accurately testing the Seebeck coefficient of the film-shaped thermoelectric material, and solve the problem of material edge effect and the relationship between the sampling electrode and the film-shaped thermoelectric material. The problem of excessive test error caused by poor material contact

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  • A method for testing the Seebeck coefficient of a film-shaped thermoelectric material and its testing device
  • A method for testing the Seebeck coefficient of a film-shaped thermoelectric material and its testing device
  • A method for testing the Seebeck coefficient of a film-shaped thermoelectric material and its testing device

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Embodiment

[0045] The sample to be tested is Bi prepared on the surface of a 25mm*25mm*1mm alumina ceramic sheet by screen printing. 0.5 Sb 1.5 Te 3 Thick film material, its film thickness is 30μm. Fix the sample to be tested on the test end module 100, place it in the tubular heating furnace 500, pass through nitrogen protection, set the tubular heating furnace 500 at a speed of 5 °C / min, and raise the temperature from room temperature to 200 °C. The Seebeck coefficients of the test sample 4 were tested at room temperature, 50°C, 75°C, 100°C, 125°C, 150°C, 175°C, and 200°C respectively.

[0046] The specific test process is to observe that the temperature of the furnace rises to the required test temperature, and start to pass current to the strip-shaped ceramic heating plate 5 in the test device. In this example, we use a current of 0.4A. Through the data acquisition module 300, read and record the temperature T of the high temperature end of the sample 4 to be tested collected by t...

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Abstract

The invention discloses a method device for testing the Seebeck coefficient of a film thermoelectric material, relates to a special method or equipment for detecting a thermoelectric semiconductor apparatus or a component of the thermoelectric semiconductor apparatus, and particularly relates to a method and device for testing the Seebeck coefficient of a film thermoelectric semiconductor material. The test device comprises a test end module, a heating module and a data collection module; an adjustable constant current source is adopted to control a strip-shaped ceramic heating plate to control the temperature difference at two ends of a to-be-tested sample; a filiform electrode in linear contact with a to-be-tested sample along the equipotential line direction is arranged on the test end module; a temperature difference electrodynamic potential signal is collected through the filiform electrode and then converted into a digital signal through the data collection module, and the digital signal is transmitted to a computer. By adopting the method disclosed by the invention, a measurement error caused by the material edge effect and bad contact with a sampling point can be avoided, the distance of the filiform electrode, and the position of the strip-shaped ceramic heating plate can be set according to the specification of a to-be-tested sample, and the problem that the existing test module cannot test samples with different specifications and dimensions is solved.

Description

technical field [0001] The invention relates to a method or equipment specially suitable for testing thermoelectric semiconductor devices or parts thereof, in particular to a method and device for testing the Seebeck coefficient of film-like thermoelectric semiconductor materials. Background technique [0002] In 1821, the German scientist Seebeck (Seebeck) discovered that when two different metal wires are connected together, if one joint is placed in a high temperature state T2 (high temperature), and the other joint is placed in a low temperature state T1 (cold end) , there is an electromotive force difference ΔV between the two ends, this phenomenon is called the Seebeck effect, ΔV is proportional to the temperature difference ΔT between the hot and cold ends, that is, ΔV=SΔT, where S is called the Seebeck coefficient. [0003] Seebeck coefficient is one of the most important performance parameters of thermoelectric materials. Accurate determination of it has important a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N25/20
Inventor 栾伟玲王伟王统才
Owner EAST CHINA UNIV OF SCI & TECH