A preparation method for a TSV sample

Abstract

The invention provides a preparation method for a TSV sample. The to-be-processed sample which contains a radial section of TSV structure is tilted and thus the included angle between the radial section of TSV structure and an FIB machine stand is an obtuse angle. The method shortens the effective depth which is obtained by FIB in a grinding zone, makes grinding depth within the capacity of the FIB machine stand, greatly reduces the sample defects such as stretch marks and stripping, improves the topography flatness of the analysis area of the sample, and at the same time shortens the preparation time and improves the preparation efficiency.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a TSV sample. Background technique [0002] TSV (Through Silicon Via) is a new technology for the interconnection of stacked chips in three-dimensional integrated circuits. The shortest, smallest size, low energy consumption and many other advantages have become one of the technologies that have attracted much attention in the industry. [0003] At present, the depth of TSV structure generally reaches about 130um or more. Obviously, this poses a great challenge to FA (failure) analysis. [0004] In the prior art, methods for preparing TSV samples include a chemical polishing (Polish) method and a focused ion beam (FIB) method. [0005] Among them, the general process of the chemical polishing method includes: slicing, grinding, digging and polishing. However, although the chemical polishing method can well display the morphology of TSVs, it is ...

AI Technical Summary

Problems solved by technology

Moreover, the preparation of samples is very time-consuming. For example, when the sample analysis area is 5-10um and the depth is about 5-10um, the preparation process takes about 1 hour.

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