CMOS operation amplifier with great direct-current open-loop voltage gain

A technology of operational amplifier and voltage gain, applied in the direction of DC-coupled DC amplifiers, differential amplifiers, etc., can solve the problems of limited improvement and achieve the effects of wide unity gain bandwidth, high DC open-loop voltage gain, and short settling time

Active Publication Date: 2014-08-06
西安电子科技大学重庆集成电路创新研究院
View PDF4 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, although some new op amps have higher Av in recent years, the degree of improvement is still limited

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CMOS operation amplifier with great direct-current open-loop voltage gain
  • CMOS operation amplifier with great direct-current open-loop voltage gain
  • CMOS operation amplifier with great direct-current open-loop voltage gain

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0032] Such as figure 1 As shown, it is a circuit diagram of an operational amplifier of an embodiment of the present invention. In this circuit, nodes Vin+ and Vin- are respectively the positive and negative input terminals of the operational amplifier, and nodes Vout+ and Vout- are respectively the positive and negative input terminals of the operational amplifier. The output terminal and the negative output terminal, the node VDD and the node GND are respectively connected to the power supply voltage and the ground voltage. The operational amplifier of this embodiment includes: a first transistor M0, a second transistor M1, a third transistor M2, a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a ninth tr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a CMOS (Complementary Metal-Oxide-Semiconductor) operation amplifier with great direct-current open-loop voltage gain. The CMOS operation amplifier comprises a first transistor M0, a second transistor M1, a third transistor M2, a fifth transistor M5, a sixth transistor M6, a seventh transistor M7, an eighth transistor M8, a ninth transistor M9, a tenth transistor M10, an eleventh transistor M11, a twelfth transistor M12, a thirteenth transistor M13, a fourteenth transistor M14, a fifteenth transistor M15, a sixteenth transistor M16, a seventeenth transistor M17 and an eighteenth transistor M18. A feedback loop is formed by the operation amplifier through the transistors M13-M18. Compared with a traditional folding common-source and common-gate amplifier, the CMOS operation amplifier has the advantages of high DC open-loop voltage gain, wide unit gain band width, short built-up time and less power consumption.

Description

technical field [0001] The invention relates to the field of analog circuit design, in particular to a CMOS operational amplifier with a very large DC open-loop voltage gain in the analog circuit. Background technique [0002] Operational amplifiers are usually important modules in analog circuits, and their DC open-loop voltage gain Av is a very important technical parameter. For a traditional op amp, if you want it to have a larger Av, it will consume much more power consumption and area. [0003] Existing operational amplifiers include multiple PMOS (P-channel metal oxide semiconductor FET, P-channel metal oxide semiconductor field effect transistor) transistors and NMOS (N-channel metal oxide semiconductor FET, N-channel metal oxide semiconductor Field Effect Transistor) Transistor, through multiple transistors to produce the operational amplifier effect. In addition, although some new op amps have higher Av in recent years, the degree of improvement is still limited. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F3/45
Inventor 庄浩宇杨银堂朱樟明丁瑞雪
Owner 西安电子科技大学重庆集成电路创新研究院
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products