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Phase change memory and reading method thereof

A technology of memory and storage unit, which is applied in the field of phase change memory and its reading, and can solve problems such as difficulty in difference

Active Publication Date: 2017-09-15
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, if the phase change memory has a resistance value of 2.1 million ohms (Mega-Ohm), the reference resistance is 2 million ohms (Mega-Ohm), and assuming that the voltage of the read bit line is 0.4 volts (Voltage), then The obtained cell current is 190 nanoamperes (nA) compared to the reference current of 200 nA, under these conditions it is quite difficult to distinguish the difference between the two

Method used

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  • Phase change memory and reading method thereof

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Embodiment Construction

[0107] Figure 4(A) and Figure 4(B) show a phenomenon that if a cell current of several microamperes (μA) or less is provided, the cell will not collapse (Breakdown), and the phase change memory with high resistance value and low The gap between the voltage values ​​obtained by the resistance phase change memory is relatively large. Going back to the example mentioned in the previous technology, assume that the phase change memory is 2.1 million ohms (Mega-Ohm), the reference resistance is 2 million ohms (Mega-Ohm), and at the same time assume that the read bit line and the reference resistance are applied With a voltage of 1 microampere (μA), the voltage read on the cell is 2.1 volts and the voltage read on the reference resistor is 2 volts. The difference between the two is 0.1 volts, which can be more easily sensed .

[0108] Figure 5 It is a circuit schematic diagram of an embodiment of the phase change memory circuit of this case, as shown in the figure, the phase chang...

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Abstract

The invention discloses a phase change memory and a reading method thereof. The phase change memory comprises: a phase change storage unit; a reference circuit for generating a reference voltage and a clamping voltage; and a current supply circuit for receiving the clamp The bit voltage is used to form a cell current flowing through the phase change memory cell to form a cell voltage, and the cell voltage is used to determine the storage information of the phase change memory in accordance with the reference voltage.

Description

technical field [0001] The present invention relates to a phase change memory (Phase Change Memory, PCM) and a reading method thereof. Background technique [0002] Phase change memory (PCM) is a non-volatile memory, and includes an array of multiple PCM cells arranged at the intersection of a column of word lines (WordLine) and a row of bit lines (Bit Line), individual memory The cell (Memory Cell) has an activation region (Activation Region) made of a phase change material, which can be switched between the crystalline (Crystalline) or amorphous (Amorphous) state by heating the memory cell. Usually, the amorphous state and the crystalline state have respectively Different detectable characteristics, such as resistance value or electrical resistivity (Electrical Resistivity), provide a distinguishable scale (Scale) between two states to store binary data in individual PCM cells. [0003] figure 1 The general behavior of a phase-change memory cell is shown, where each line...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/56
Inventor 王典彦洪俊雄陈嘉荣
Owner MACRONIX INT CO LTD