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Method and apparatus for programming non-volatile memory including a plurality of blocks

A non-volatile memory technology, applied in static memory, read-only memory, information storage, etc., can solve the problems of unusable data storage, waste of storage capacity, and difficulty in bypassing

Active Publication Date: 2014-09-17
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, it may be difficult to bypass a damaged WL region in a block
Necessarily, blocks with damaged WL regions must be marked as bad blocks, and thus cannot be used to store data
That is, one damaged WL region in a block (which may contain 32 or 64 WL regions) will render the entire block unusable, even if other WL regions in the block are not damaged
This results in wasted storage capacity
On the other hand, if the L2P map is designed at the page stage (i.e., each page is allocated a L2P map), the amount of RAM required for the L2P map may increase significantly, which may significantly increase the cost

Method used

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  • Method and apparatus for programming non-volatile memory including a plurality of blocks
  • Method and apparatus for programming non-volatile memory including a plurality of blocks
  • Method and apparatus for programming non-volatile memory including a plurality of blocks

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Embodiment Construction

[0025] Embodiments consistent with the present invention include methods for managing nonvolatile memory by finding and programming good word line (WL) regions in the memory, and methods for managing nonvolatile memory by finding and programming good word line (WL) regions in the memory. ) area to manage the device of the non-volatile memory.

[0026] Embodiments consistent with the present invention will be described below with reference to the drawings. Wherever possible, the same reference numbers will be used to refer to the same or like parts throughout the several drawings.

[0027] figure 1 A hierarchical structure of exemplary blocks 100 in non-volatile memory 102 is depicted. Such as figure 1 As shown, the exemplary block 100 contains 64 WL regions: WL-0 to WL-63. Each WL region in exemplary block 100 contains 8 pages. For example, the WL area WL-0 includes a plurality of pages of Page-0 to Page-7. exist figure 1 In the exemplary block 100 shown in , the WL reg...

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Abstract

A method for programming a non-volatile memory including a plurality of blocks, each block including a plurality of sections, each section including at least one page, and each page including a plurality of memory cells. The method includes checking a current section of the plurality of sections against a damaged section table to determine whether the current section is damaged. The damaged section table records information about whether a section in the memory is good or damaged. The method further includes using the current section for programming if the current section is not damaged.

Description

[0001] This application is based upon and claims the benefit of US Provisional Application No. 61 / 776,796 filed March 12, 2013, the entire contents of which are hereby incorporated by reference. technical field [0002] The present invention relates to managing damaged areas in non-volatile memory, and more particularly, to methods and apparatus for programming non-volatile memory with damaged areas. Background technique [0003] In non-volatile (NV) memory, such as NAND-type flash memory or 3D vertical gate (3DVG) NATqD flash memory, memory cells are usually managed in a hierarchical structure. The basic programming unit in NV memory is a page, where a group of memory cells can be programmed together during a programming session. One or more pages can be controlled by a word line (WL), which applies a voltage to the control gates of the memory cells in the page. In conventional non-3DVGNV memory, one WL may only control one page. However, in a 3DVGNV memory, one WL can co...

Claims

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Application Information

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IPC IPC(8): G11C16/10G11C29/12
CPCG11C29/04G11C16/10G11C2029/4402G11C29/808G11C29/82
Inventor 高龙毅何信义洪俊雄洪硕男陈汉松阮士洲
Owner MACRONIX INT CO LTD