High work-function buffer layers for silicon-based photovoltaic devices
A high work function, photovoltaic device technology, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of limiting the overall energy conversion efficiency of PV cells and reducing the filling factor of PV cells
Inactive Publication Date: 2014-10-01
APPLIED MATERIALS INC
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Problems solved by technology
Therefore, although a wider bandgap p-layer is intended to generate higher photocurrent and photovoltage in solar cells, a wider bandgap p-layer can also cause a decrease in the fill factor in a PV cell, thereby limiting the overall energy conversion efficiency of the PV cell.
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[0019] Embodiments of the invention generally provide silicon-based photovoltaic (PV) devices, such as solar or PV cells, comprising a high work function buffer disposed between a transparent conductive oxide (TCO) layer and a silicon-based p-i-n junction layer to provide the TCO / HWFL / p-layer interface. The high work function buffer layer eliminates or substantially reduces electrons at the TCO / HWFL / p layer interface in a PV cell relative to the electron barrier at the TCO / p layer interface in a PV cell without the high work function buffer layer Potential barriers (such as Schottky barriers). The elimination or substantial reduction of the electron barrier enables the use of p-type materials with higher carbon concentrations and wider bandgap energies in the p-layer without sacrificing fill factor. The fill factor is a parameter used to evaluate the performance of a solar cell, and is determined as the ratio of the actually obtainable maximum power to the product of the open...
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Embodiments of the invention generally provide a silicon-based photovoltaic (PV) device containing a high work-function (HWF) buffer layer disposed between a transparent conductive oxide (TCO) layer and a p-type silicon-based layer of a p-i-n junction. The PV device generally has a transparent substrate, a first TCO layer disposed on the transparent substrate, a HWF buffer layer disposed on the first TCO layer, a p-i-n junction disposed on the high work-function buffer layer, a second TCO layer disposed on the n-type silicon-based layer, and a metallic reflective layer disposed on the second TCO layer. The p-i-n junction contains an intrinsic layer disposed between a p-type silicon-based layer and an n-type silicon-based layer, and the p-type silicon-based layer is in contact with the HWF buffer layer.
Description
technical field [0001] Embodiments of the present invention relate generally to optoelectronic devices, and more particularly to silicon-based optoelectronic devices with high work function buffer layers. Background technique [0002] In solar, display, and touch screen technologies, transparent conductive oxide (TCO) materials and layers are used as electrodes to provide low-resistance electrical contact to the active layers of a device while also allowing light to propagate to the active layers. layers or propagate from these layers. In single-junction and tandem-junction thin-film silicon solar technologies, the electrical contact is made from the TCO layer to the p-i-n silicon structure. A p-i-n silicon junction typically includes an amorphous silicon (α-Si) layer and a hydrogenated amorphous silicon (α-Si:H) layer. The incident sunlight is absorbed in the p-i-n silicon junction, generating photo-generated electrons and photo-generated holes, which are separated from e...
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IPC IPC(8): H01L31/075H01L31/076H01L31/056H01L31/0224
CPCY02E10/52H01L31/0527H01L31/075H01L31/022466Y02E10/548H01L31/056H01L31/076Y02E10/545Y02E10/546Y02E10/547H01L31/022475H01L31/022483H01L31/028H01L31/0288H01L31/03682H01L31/03685H01L31/03762H01L31/077
Inventor 柯蒂斯·莱施克斯史蒂文·韦尔韦贝克罗曼·古科罗伯特·维瑟
Owner APPLIED MATERIALS INC