High-voltage light emitting diode chip and manufacturing method thereof

Abstract

The invention discloses a high-voltage light emitting diode chip and a manufacturing method of the high-voltage light emitting diode chip. A liquid insulating material layer or a liquid conducting material layer is introduced and then solidified for insulation or bridge connection, and the widths of isolation grooves between light emitting units can be ultra narrow, wherein the widths of openings are smaller than or equal to 0.3 micrometer, so that single chip output is increased, the area of an effective light emitting region is expanded, and light emitting efficiency is improved; the problem that a traditional high-voltage light emitting diode metal wire is prone to breakage when striding over a channel with the large fall is solved, and the series / parallel bridging yield is increased; in addition, the manufacturing method can be achieved at a chip manufacturing end, and manufacturing cost is low.

Description

technical field

[0001] The invention relates to a high-voltage light-emitting diode chip and a manufacturing method thereof. Background technique

[0002] Light Emitting Diode (LED in English) is a kind of semiconductor diode, which can convert electrical energy into light energy, and emit visible light of various colors such as yellow, green, and blue, as well as infrared and ultraviolet invisible light. Compared with incandescent bulbs and neon lamps, it has the advantages of low working voltage and current, high reliability, long life and convenient adjustment of luminous brightness. Since the successful development of LED, with the continuous progress of research, its luminous brightness has also been continuously improved, and its application fields have become wider and wider.

[0003] In recent years, in response to lighting needs, high-power LEDs have become the focus of development by various factories. Traditional formal-mounted high-power LEDs mostly use a singl...

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