Gallium nitride apparatus and manufacturing method thereof

Abstract

The invention discloses a manufacturing method for a gallium nitride apparatus. The manufacturing method for the gallium nitride apparatus includes that firstly, defining a source region on a gallium nitride wafer; secondly, preparing an Ohmic contact and a grid metal insert finger on the source region; thirdly, preparing a source metal insert finger and a drain metal insert finger on the Ohmic contact; fourthly, preparing a grid electrode, a source electrode, a drain electrode and a back electrode; and finally, packaging inversely. The manufacturing method for the gallium nitride apparatus introduces the apparatus unit and matrix concepts, the insert finger length and width are effectively reduced, and the parasitic effect is reduced; and meanwhile, all the insert fingers are located in the same direction, and therefore, the source electrode width and drain electrode width can be reduced as far as possible so as to increase the proportion of the active region, and moreover, the grid electrode and the back electrode are embedded in the gap between the source electrode and drain electrode, the influence on the area of the source region of the apparatus can be neglected, and therefore, the effective area proportion is greatly improved, and the apparatus power density is increased. The inverse packaging method is good for agilely arranging the electrode interconnecting metal and improving the apparatus cooling performance.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a gallium nitride device with high power density and a manufacturing method thereof. Background technique [0002] GaN semiconductors have unique material properties that have sparked interest in the research and development of optoelectronic and electronic devices for semiconductor systems. In the field of power electronics, gallium nitride devices are mainly AlGaN / GaN High Electron Mobility Transistor devices (AlGaN / GaN High Electron Mobility Transistor), which benefit from the AlGaN / GaN heterojunction High-concentration two-dimensional electron gas (2DGE), AlGaN / GaN high electron mobility devices can have high current conduction density and high withstand voltage capability at the same time, especially suitable for high-voltage and high-power power electronics applications. [0003] Such as figure 1 As shown, the gallium nitride device 1 includes a bottom su...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a gallium nitride device and its manufacturing m

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