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Measuring system for measuring an imaging quality of an EUV lens

一种测量系统、成像质量的技术，应用在测量EUV镜头的成像质量领域，能够解决困难获得测量精度等问题

Active Publication Date: 2014-12-10
CARL ZEISS SMT GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to this amplification, interferometry methods for EUV lithography optical units can only achieve the required measurement accuracy with difficulty

Method used

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  • Measuring system for measuring an imaging quality of an EUV lens
  • Measuring system for measuring an imaging quality of an EUV lens
  • Measuring system for measuring an imaging quality of an EUV lens

Examples

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no. 1 example

[0130] For the first embodiment, the design is based on Image 6 The exact specifications for the individual layers of the test mask 12 are contained in Table 1 below. In this embodiment, the multilayer arrangement 76 comprises forty consecutive layer sequences Si-MoSi 2 -Mo-MoSi 2 . The indications related to the test structure 26 are exemplary and may be modified according to the variations described in this application.

[0131]

[0132] Table 1

[0133] In another embodiment of the test mask 12, the continuous layer sequence Si-MoSi 2 -Mo-MoSi 2 The number is less than forty, especially twenty or thirty. As for the rest, this example corresponds to the specifications of Table 1. In this case, although the total reflectivity is lower than in the case of the embodiment with forty sequences, the change in reflectivity over the angular range of 1° to 13° is smaller.

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Abstract

A measuring system (10) for measuring an imaging quality of an EUV lens (30) comprises: a diffractive test structure (26), a measurement light radiating device (16) which is configured to radiate measurement light (21) in the EUV wavelength range onto the test structure, a variation device (28) for varying at least one image-determining parameter of an imaging of the test structure that is effected by means of a lens, a detector (14) for recording an image stack comprising a plurality of images generated with different image-determining parameters being set, and an evaluation device (15) which is configured to determine the imaging quality of the lens from the image stack.

Description

[0001] This application claims priority to German Patent Application No. 10 2012 204 704.2 filed on March 23, 2012 and to US Provisional Application No. 61 / 614759 filed on March 23, 2012. The entire contents of the German patent application and the US provisional application are incorporated into the present application by reference. technical field [0002] The invention relates to a measurement system for measuring the imaging quality of an EUV lens, an arrangement comprising an EUV lens for inspection equipment and a measurement system of the above-mentioned type, a method for inspecting the surface of a substrate for microlithography Inspection equipment and a method of measuring the imaging quality of an EUV lens. Background technique [0003] The measurement of the wavefront aberration of an EUV lens at its operating wavelength is a key parameter for qualifying and ensuring EUV lens performance. Existing solutions are optimized for systems with a reduction factor of 4...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20G01M11/00
CPCG01M11/005G03F7/706G01M11/0207
Inventor R.弗里斯M.萨马尼戈M.德冈瑟H.海德纳R.霍克M.施里弗
Owner CARL ZEISS SMT GMBH