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Substrate cleaning device and substrate cleaning method

A technology for cleaning devices and substrates, used in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reduced device productivity, large contact angle differences, and easy generation of residues, etc., to achieve good cleaning effect, good cleaning, The effect of suppressing liquid residue

Active Publication Date: 2018-01-09
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] As the base film, the mainstream is an anti-reflection film made of an organic material, but recently, an anti-reflection film made of an inorganic material with a smaller contact angle has been studied. In this case, the contact angle between the exposed part and the unexposed part The difference further becomes larger, and residues are more likely to be generated
[0006] When the above-mentioned cleaning is performed on a substrate with a large difference in contact angle between the exposed part and the unexposed part, it is effective to slow down the scanning speed of the cleaning liquid nozzle, but it will cause a decrease in the productivity of the device.

Method used

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  • Substrate cleaning device and substrate cleaning method
  • Substrate cleaning device and substrate cleaning method
  • Substrate cleaning device and substrate cleaning method

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Experimental program
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no. 2 Embodiment approach

[0130] In addition, the substrate cleaning apparatus of the second embodiment may be configured to include two nozzle arms. For example, such as Picture 20 , Figure 21 As shown, in addition to the point that the second cleaning liquid nozzle 43 is not included, the second embodiment includes a first nozzle arm 38 constructed in the same manner as the nozzle arm 30 shown in the first embodiment and another nitrogen nozzle 59. The second nozzle arm 39. In the figure, reference numeral 60 is a nozzle arm for development, reference numeral 61 is a nozzle groove for developer, and reference numeral 63 is a guide rail. The second nozzle arm 39 is configured to be supported by a driving unit and an elevating unit configured similarly to the nozzle arm 30 and to move along a guide rail 69 extending parallel to the guide rail 33 of the first nozzle arm 38. The second nozzle arm 39 is configured to move in a region different from the movement region of the first nozzle arm 38 on the w...

Embodiment 1

[0162] In order to evaluate the present invention, the substrate cleaning apparatus of the first embodiment was used, and a developer was supplied to the wafer W exposed with the evaluation pattern, and the cleaning process of the Examples and Comparative Examples and the counting of pattern defects were performed. The difference in contact angle between the resist film and the anti-reflection film formed on the surface of the wafer W used in the example was 37.8°. The rotation speed of the wafer during the cleaning process was set to 750 rpm, and the movement speed of the nozzle arm 30 was set to 10 mm / sec. In addition, as a comparative example, a substrate cleaning device with the same structure as the example was used. After step 2, the cleaning liquid nozzle and the nitrogen nozzle were not switched, but the first cleaning liquid and the first cleaning liquid were sprayed toward the wafer. In the state of nitrogen, the nozzle arm 30 is moved in the X direction toward the pe...

Embodiment 2

[0169] In order to evaluate the present invention, the substrate cleaning apparatus of the first embodiment was used to supply a developer to the wafer W exposed using the evaluation pattern, and the height of the tip of the first nitrogen gas nozzle 51 was set to be above the wafer W. 25mm and 5mm were cleaned, the pattern was formed, and the surface of the wafer W was inspected. Residue defects (development defects) within 3 cm from the center of the wafer W were counted. When the height of the tip of the first nitrogen nozzle 51 is set to 25 mm above the wafer W, there are 8 defects, and when the height of the tip of the first nitrogen nozzle 51 is set to 5 mm above the wafer W There are 3 defects. It can be said that by setting the height of the tip portion of the first nitrogen gas nozzle 51 to be low, it is possible to reduce liquid residue near the center portion of the wafer W.

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Abstract

The invention provides a substrate cleaning device and a substrate cleaning method. The cleaning liquid and gas are sprayed sequentially toward the center of the substrate while rotating the substrate, and after the nozzles for spraying the cleaning liquid and gas are moved toward the peripheral edge side of the substrate, they are switched to a position deviated from the moving locus of the first cleaning liquid nozzle. The cleaning liquid is sprayed from the second cleaning liquid nozzle at the position, and the two nozzles are moved toward the peripheral side of the substrate while spraying the cleaning liquid and gas, so that the spraying position of the second cleaning liquid nozzle reaches the center of the substrate. Each nozzle is moved so that the difference between the distance of the gas nozzle and the distance from the spraying position of the gas nozzle to the center of the substrate gradually becomes smaller.

Description

Technical field [0001] The present invention relates to a substrate cleaning device and a substrate cleaning method that clean the surface of the substrate with a cleaning liquid while rotating the substrate. [0002] This application is based on Japanese Patent Application No. 2013-112395 filed in Japan on May 28, 2013, Japanese Patent Application No. 2014-014864 filed in Japan on January 29, 2014, and Japanese Patent Application No. 2014-014864 filed in Japan on March 20, 2014 The special application No. 2014-058221 filed by China requires the right of preference, and the content of the above application is quoted here. Background technique [0003] As an exposure process for forming a resist pattern on a substrate such as a semiconductor wafer, there is known liquid immersion exposure in which liquid is exposed on the surface of the substrate. For the resist used for immersion exposure, a resist with high hydrophobicity is used in order to prevent it from spreading to the perip...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/67H01L21/02H01L21/027
CPCH01L21/67051
Inventor 大河内厚吉原孝介一之宫博西畑广内藤亮一郎
Owner TOKYO ELECTRON LTD