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Buried power module for high/low voltage insulation

A high and low voltage isolation, power module technology, applied in the field of power devices, can solve the problems of driver IC failure, electrical backlash, etc.

Active Publication Date: 2014-12-24
IND TECH RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, when the high voltage VH is greater than 1200V, the traditional power module 100 may cause electrical kickback phenomenon of the power transistor 120 during operation because the low-voltage domain circuit and the high-voltage domain circuit are arranged on the same circuit board, resulting in Driver IC failure

Method used

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  • Buried power module for high/low voltage insulation
  • Buried power module for high/low voltage insulation
  • Buried power module for high/low voltage insulation

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Embodiment Construction

[0057] As used throughout this specification (including the claims), the term "coupled" may refer to any connection means, direct or indirect. For example, if it is described in the text that a first device is coupled to a second device, it should be interpreted that the first device can be directly connected to the second device, or the first device can be connected through other devices or some kind of connection means. indirectly connected to the second device. In addition, wherever possible, elements / components / steps using the same reference numerals in the drawings and embodiments represent the same or similar parts. Elements / components / steps using the same symbols or using the same terms in different embodiments can refer to related descriptions.

[0058] figure 2 It is a schematic circuit diagram illustrating a high and low voltage isolation embedded power module 200 according to an embodiment of the present invention. The high and low voltage isolation embedded pow...

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Abstract

A buried power module for high / low voltage insulation is provided. The power module includes a first substrate, a second substrate and an insulating substrate. The first substrate includes a first control circuit and a light source, wherein the first control circuit controls the light source to emit light. The second substrate includes a light-sensing part, a second control circuit and a power device. The light-sensing part receives the light of the light source of the first substrate to send sensing information. The second control circuit correspondingly drives the power device in accordance with the sensing information. The insulating substrate is disposed between the first substrate and second substrate.

Description

technical field [0001] The invention relates to a power device, and in particular to a high and low voltage isolation embedded power module. Background technique [0002] figure 1 is a schematic circuit diagram illustrating a conventional power module 100 . The power module 100 includes a control circuit 110 and a power transistor 120 . The base B of the power transistor 120 is coupled to the control circuit 110 . The collector C of the power transistor 120 is coupled to the high voltage VH. The emitter E of the power transistor 120 is coupled to the load 10 . According to the low-voltage control signal Sc, the control circuit 110 can correspondingly control the conduction state of the power transistor 120 . When the power transistor 120 is turned on, the high voltage VH can supply power to the load 10 (such as a vehicle motor) via the power transistor 120 . The power transistor 120 needs to withstand high voltage and high current. Generally speaking, the operating vo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L25/16H01L23/31
CPCH01L2924/15787H01L2924/15788H01L2924/13055H01L2224/40137H01L2224/40225H01L2924/12041H01L2924/12043H01L24/40H01L2924/181H01L2224/371H01L2224/84801H01L2224/37124H01L2224/37147H01L2224/83801H01L24/37H04B10/802H01L2224/8385H01L2224/8485H01L2924/00H01L2924/00012H01L2924/00014H01L24/34
Inventor 黄馨仪陈文志张道智
Owner IND TECH RES INST