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Trap mechanism, exhaust system, and film formation device

A technology of trapping mechanism and exhaust system, applied in the field of trapping mechanism, can solve the problems of low cooling and trapping efficiency, etc.

Active Publication Date: 2014-12-24
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] In the above-mentioned trapping mechanism, it is difficult to efficiently cool the gas of a substance with a low vapor pressure and relatively hard to liquefy to a trapable temperature, and the trapping efficiency is low.

Method used

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  • Trap mechanism, exhaust system, and film formation device
  • Trap mechanism, exhaust system, and film formation device
  • Trap mechanism, exhaust system, and film formation device

Examples

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Embodiment Construction

[0022] Hereinafter, preferred embodiments of the collection mechanism, exhaust system, and film forming apparatus of the present invention will be described in detail based on the drawings. Here, the following example is explained: Ru (EtCp) is used as a raw material 2 , RuCpBuCp, RuCpPrCp, Ru(nbd)(iHD) 2 An organometallic compound that is liquid at room temperature is gasified to generate a raw material gas, and the raw material gas is used to form a thin metal Ru film, and the unreacted raw material gas is liquefied and recovered as a trap gas from the exhaust gas.

[0023] Such as figure 1 As shown, the film forming apparatus 2 mainly includes: a film forming apparatus main body 4 that performs film forming processing on a disc-shaped semiconductor wafer W as a to-be-processed body; A gas supply system 6 for necessary gas; an exhaust system 8 for discharging exhaust gas from the film forming apparatus main body 4; and a collection mechanism 10 provided in the exhaust system 8. ...

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Abstract

This trap mechanism (10) is provided in the middle of an exhaust passage (60) through which an exhaust gas, which is exhausted from a film formation device body (4) that forms a thin film on the surface of an object to be processed (W), flows, and recovers a gas to be collected that is contained in the exhaust gas by cooling and liquefying the gas to be collected. The trap mechanism (10) comprises: a housing (72) having a gas inlet (72A) and a gas outlet (72B); a partitioning member (76) that partitions the inside of the housing into a plurality of retention spaces (74A-74C); communication paths (78A, 78B) that communicate the retention spaces with one another; and cooling jacket parts (80A, 80B) that cool the communication paths in order to cool the exhaust gas. With this structure, the exhaust gas is adiabatically expanded while being cooled, and the gas to be collected is efficiently cooled and liquefied.

Description

Technical field [0001] The present invention relates to a film forming apparatus, an exhaust system, and a collection mechanism using these when forming a film on a processed body such as a semiconductor wafer using a source gas. Background technique [0002] Generally, in order to form integrated circuits such as ICs and logic elements, the steps of forming a thin film on the surface of a semiconductor wafer, LCD substrate, etc. and etching the thin film into a desired pattern are repeated. [0003] In the film forming process performed by the film forming apparatus, by reacting a predetermined processing gas (raw material gas) in the processing container, a silicon thin film, silicon oxide or nitride thin film, or a thin film of silicon oxide or nitride is formed on the surface of the object to be processed. Metal thin films, metal oxide or nitride thin films, etc. Excessive reaction by-products are generated simultaneously with the film-forming reaction, which are discharged to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44B01D8/00H01L21/205
CPCB08B9/00C23C16/18C23C16/4405C23C16/4412H01L21/67017Y02C20/30Y02P70/50H01L21/205F28B9/08
Inventor 小森荣一八木宏宪
Owner TOKYO ELECTRON LTD