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Polysilicon fuse monitoring structure and monitoring method

A polysilicon fuse, fusing technology, applied in the direction of fuse testing, instruments, electrical components, etc., can solve problems such as inability to obtain other devices, inability to monitor polysilicon fuses, devices or circuits that cannot work normally, etc.

Active Publication Date: 2015-01-21
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Because polysilicon will burst when it is fused, it will affect the surrounding devices or circuits, making the devices or circuits unable to work normally
The traditional monitoring structure cannot monitor whether the surrounding devices or circuits are affected after the polysilicon fuse is blown and burst, nor can it be concluded that how far away from other devices or circuits is the safe distance from the polysilicon fuse
[0004] Therefore, the traditional polysilicon fuse monitoring structure cannot effectively and comprehensively monitor polysilicon fuses, nor can it provide customers with a design criterion

Method used

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  • Polysilicon fuse monitoring structure and monitoring method
  • Polysilicon fuse monitoring structure and monitoring method
  • Polysilicon fuse monitoring structure and monitoring method

Examples

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Embodiment Construction

[0020] The polysilicon fuse monitoring structure described in the present invention is generally placed in the scribing groove area of ​​the chip. like figure 2 As shown, it includes a polysilicon fuse 101 with a specific length and width (determined according to the actual demand of the product). The two ends of the polysilicon fuse 101 have a first lead-out area 102 and a second lead-out area 103. The first lead-out area 102 and the second lead-out area 103 The second lead-out area 103 is a multi-layer metal structure, and each layer of metal is connected by a through hole 104 and an interlayer connection hole 105; the first lead-out area 102 and the second lead-out area 103 also have a first test terminal 201 and a second Test terminal 202;

[0021] There is an unclosed conductive ring 106 around the polysilicon fuse 101 and the first and second lead-out areas at a certain distance D, and the two ports of the unclosed conductive ring 106 are the third test terminal 203 an...

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PUM

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Abstract

The invention discloses a polysilicon fuse monitoring structure. The polysilicon fuse monitoring structure comprises a polysilicon fuse with specific length and width and two leading-out ends connected with two ends of the polysilicon fuse, wherein a loop of incomplete chain type ring belt surrounds the polysilicon fuse and the leading-out ends at a certain distance, and two ends of the ring belt are another two leading-out ends. The invention further discloses a monitoring method for the polysilicon fuse monitoring structure. Through the method and the structure, the distance between the chain type ring belt and the polysilicon fuse can be adjusted, so resistance value change of the incomplete chain type ring belt before and after fusing of the polysilicon fuse can be effectively monitored, and a safety distance from the polysilicon fuse to a peripheral circuit of the polysilicon fuse can be acquired.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a polysilicon fuse monitoring structure and monitoring method. Background technique [0002] The fuse structure is widely used in the field of integrated circuits and is an important part of the integrated circuit. Generally used for circuit, data protection, etc., the polysilicon fuse that is blown by high current is a relatively common fuse structure. The fusing of polysilicon fuses often affects the surrounding circuits when polysilicon fuses are blown. The traditional structure of monitoring the fusing status of polysilicon fuses only has a separate structure of polysilicon fuses, such as figure 1 As shown, the structure is composed of a polysilicon fuse 101 and a first lead-out region 102 and a second lead-out region 103 on both sides of the polysilicon. 104 connects each layer of metal. When fusing the polysilicon fuse, the fusing condition o...

Claims

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Application Information

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IPC IPC(8): H01L23/525H01L23/544G01R31/07G01R31/74
Inventor 苗彬彬
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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