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High-frame-rate global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor and signal transmission method thereof

An image sensor and global pixel technology, applied in the field of image sensors, can solve problems such as deformation and image distortion, and achieve the effect of high global exposure

Active Publication Date: 2015-02-04
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT +1
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

This non-simultaneity is no problem for ordinary camera applications, but it will cause obvious image distortion and deformation when shooting images at high frame rates

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  • High-frame-rate global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor and signal transmission method thereof
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  • High-frame-rate global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor and signal transmission method thereof

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Embodiment Construction

[0037] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings. Of course, the present invention is not limited to this specific embodiment, and general replacements known to those skilled in the art are also covered within the protection scope of the present invention.

[0038] figure 1 It is a block diagram of the global pixel CMOS image sensor of the present invention. As shown in the figure, the CMOS image sensor includes a pixel array 10, a first tail current module 20, a first decoding module 30, a second decoding module 40 and an output driver Module 50. The pixel array 10 is composed of multiple global pixels, including 4000×2000=8 million global pixels in this embodiment. The first tail current module 20 includes a plurality of grounded first tail current sources respectively corresponding to each column of the pixel arra...

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Abstract

The invention discloses a global pixel CMOS (Complementary Metal Oxide Semiconductor) image sensor. The global pixel CMOS image sensor comprises a pixel array, a first tail current module, a first decoding module, a second decoding module and an output driving module; the pixel array is formed by a plurality of global pixels; the first tail current module comprises a plurality of tail current sources which are arranged corresponding to every column of the pixel array; the first decoding module is used for controlling the simultaneous exposure and signal sampling of every global pixel, selecting every line of the pixel array in turn and reading a signal of every global pixel of every selected line simultaneously; the second decoding module is used for outputting the signal of every global pixel of every line selected through the first decoding module in turn; the output driving module is used for performing serial output on the signals which are output through the second decoding module in turn. According to the high-frame-rate global pixel image sensor and a signal transmission method thereof, the global exposure can be implemented and the frame rate is high.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to a high frame rate global pixel CMOS image sensor and a signal transmission method thereof. Background technique [0002] Image sensors are an important part of digital cameras. According to the different components, it can be divided into two categories: CCD and CMOS. A prerequisite for the wide application of CMOS sensors is their higher sensitivity, shorter exposure time and shrinking pixel size. [0003] Generally speaking, the frame rate of a CMOS image sensor depends on the capability of the rear digital signal processor (DSP). At present, the usual digital signal processor is capable of processing 30 frames per second (30fps) under 1080p full HD video stream capability, this frame rate capability is sufficient for high-definition video streaming. [0004] But for some special applications, the video streaming frame rate of 30 or 60 frames per second is far from enough. For ...

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Application Information

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IPC IPC(8): H04N5/374H04N5/351
Inventor 赵宇航李琛任铮
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT