Single-photon avalanche photodiode time-delay integration cmos image sensor

A time delay integration, photodiode technology, applied in image communication, television, electrical components, etc., can solve problems such as insufficient detection ability, and achieve the effect of global exposure, low pressure, and consistency.

Inactive Publication Date: 2020-01-17
TIANJIN UNIV
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to overcome the deficiencies of the prior art, the present invention aims at the problem of insufficient detection ability of ordinary TDI technology under low-light conditions, and uses SPAD as the pixel of the TDI image sensor to detect low-light conditions.

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Embodiment Construction

[0013] The system circuit structure diagram is as follows figure 1 As shown, the matrix of X multiplied by Y is formed by the arrangement of square pixels, and the internal circuit structure diagram of the i-th row and j-th column pixel is as follows figure 2 As shown, it is composed of SPAD unit and circuit unit. Taking N-bit output precision as an example, the SPAD unit is controlled by the select signal to convert the external signal source into a pulse signal. A pixel has N circuit units in total. Taking the Kth unit as an example, it is connected to IN(i, j)[k], OUT(i, j)[k], DATA(i, j)[k], DATA(i,j)[k+1] four signals, where OUT(i,j)[k]=IN(i+1,j)[k]. Its internal structure diagram is as follows Figure 4 shown. It is composed of D flip-flop and transmission gate with reset function. IN(i,j)[k] is connected to the input terminal of transmission gate I2, the output terminal of I2 is connected to the D terminal of the D flip-flop, DATA(i,j)[k] is connected to the clock ...

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Abstract

The invention relates to the field of CMOS integrated circuits. In order to solve the problem of insufficient detection ability of ordinary TDI technology under low-light conditions, SPAD is used as a pixel of a TDI image sensor to detect lower light conditions. At the same time, the present invention has the characteristics of simple global exposure sequence design and the like. The technical solution adopted by the present invention is that the single photon avalanche photodiode time delay integral CMOS image sensor is arranged in a matrix of X by Y by square pixels, and the internal circuit structure of the i-th row and j-th column pixel consists of a SPAD unit and Composed of circuit units, the SPAD unit is controlled by the select signal to convert the external signal source into a pulse signal; and a pixel has N circuit units in total, in the kth circuit unit. The invention is mainly applied to the design and manufacture of CMOS integrated circuits.

Description

technical field [0001] The invention relates to the field of CMOS integrated circuits, in particular to the fields of time delay integration CMOS image sensors and single photon avalanche photodiodes. Background technique [0002] Solid-state image sensors are mainly divided into two types: Complementary Metal Oxide Semiconductor (CMOS) image sensors and Charged Coupled Device (CCD) image sensors. The CMOS image sensor has the advantages of low power consumption, small size, and high reliability because it can be embedded in a planar process. In the CMOS image sensor, according to the arrangement of pixels, it can be divided into two types: area array and line array. For the area array image sensor, a complete frame of two-dimensional image information can be obtained by one exposure, which is often used in monitoring, video recording, photography, etc., but its disadvantage is that the total number of pixels is large, and the pixels in each row are limited, so the frame ra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/374H04N5/378H04N5/351
CPCH04N25/50H04N25/76H04N25/75
Inventor 徐江涛李炜韩立镪聂凯明史再峰高静
Owner TIANJIN UNIV
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