Manufacturing method of submicron mask plate

Abstract

A manufacturing method of a submicron mask plate is provided. The method includes: providing a first substrate, forming a sacrificial layer on the first substrate, forming a metal layer on the sacrificial layer, forming a mask pattern on the metal layer by scanning with focused ion beams, fixing a second substrate onto the metal layer with the mask pattern by an adhesion layer, removing the sacrificial layer and the first substrate, and correcting the mask pattern through the focused ion beams. In the method, the mask pattern is processed from two sides of the metal layer by the focused ion beams separately, thus improving mask quality of the submicron mask plate.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a submicron mask. Background technique [0002] The manufacturing process of semiconductor integrated circuits usually requires multiple photolithography processes, and the mask is an indispensable material in the photolithography process. The quality of the mask directly affects the quality of the photolithography process, thereby affecting the semiconductor device or integrated circuit. Electrical performance, reliability and chip yield. Therefore, mask quality should be regarded as one of the important influencing factors of photolithography process analysis and production quality control, and special attention and research should be paid. [0003] With the rapid development of integrated circuit technology, the pattern line width is getting thinner and thinner. From the 1 micron line width in the 1980s, it has entered the sub-m...

AI Technical Summary

Problems solved by technology

like figure 1 As shown, when a dense grating with a grating period of 100nm and a characteristic scale of 50nm is made by using the focused ion beam direct writing method, a metal masking layer 11 with a thickness of 50nm is formed on the glass substrate 10, and the material used for the metal masking layer 11 is It is metal Cr, and the focused ion beam (FIB) bombards the metal masking layer 11 to form metal lines 12. During this process, because the metal masking layer 11 is relatively thick, the ion beam cannot go deep into the bottom of the metal masking layer 11, resulting in metal 13 residues.

Since the remaining metal will block part of the light, it will reduce the contrast of the light field and affect the photolithographic effect

[0008] It can be seen that the submicron reticle made by the focused ion beam direct writing method has problems such as insufficient depth of pattern structure, poor line smoothness and steepness, etc., which affects the mask quality of the submicron reticle. If it is not good, it will inevitably lead to poor lithography effect

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