Lithium niobate optical waveguide mask for fiber-optic gyroscope as well as preparation method and application of lithium niobate optical waveguide mask
A technology of fiber optic gyroscope and lithium niobate, applied in the direction of optical waveguide light guide, light guide, optics, etc., can solve the problem of rough edge of silicon dioxide mask, reduce residual intensity modulation, reduce roughness, and improve high and low temperature stability Effect
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Embodiment 1
[0049] A preparation method of a lithium niobate optical waveguide mask for a fiber optic gyroscope (for the process flow, see figure 1 , the schematic diagram of its preparation process is shown in figure 2 ), including the following steps:
[0050] (1) Deposit a layer of silicon dioxide film with a thickness of 80nm on the X-cut lithium niobate wafer by PECVD (plasma enhanced chemical vapor deposition method);
[0051] (2) After cleaning and drying the lithium niobate wafer on which the silicon dioxide film was deposited, spin-coat a near-ultraviolet negative photoresist (ma-N1410 near German MRT company) with a thickness of 1 μm on the silicon dioxide film surface UV negative i-ray photoresist), and then after pre-baking, exposure (exposure dose is 270mJ / cm 2 ) and developing to complete the photolithography process to form a photoresist pattern;
[0052] (3) The lithium niobate wafer formed with the photoresist pattern is subjected to aging exposure without a photolith...
Embodiment 2
[0058] A preparation method of a lithium niobate optical waveguide mask for a fiber optic gyroscope (for the process flow, see figure 1 , the schematic diagram of its preparation process is shown in figure 2 ), including the following steps:
[0059] (1) Deposit a silicon dioxide film with a thickness of 50nm on a Z-cut lithium niobate wafer by magnetron sputtering;
[0060] (2) After cleaning and drying the lithium niobate wafer on which the silicon dioxide film was deposited, spin-coat a near-ultraviolet negative photoresist (ma-N1410 type of German MRT company) with a thickness of 0.5 μm on the surface of the silicon dioxide film near-ultraviolet negative i-line photoresist), and then pre-baked and exposed (the exposure dose is 270mJ / cm 2 ) and developing to complete the photolithography process to form a photoresist pattern;
[0061] (3) The lithium niobate wafer formed with the photoresist pattern is subjected to aging exposure without a photoresist plate using a phot...
Embodiment 3
[0067] A preparation method of a lithium niobate optical waveguide mask for a fiber optic gyroscope (for the process flow, see figure 1 , the schematic diagram of its preparation process is shown in figure 2 ), including the following steps:
[0068] (1) Deposit a layer of silicon dioxide film with a thickness of 100nm on the Z-cut lithium niobate wafer by PECVD (plasma enhanced chemical vapor deposition method);
[0069] (2) After cleaning and drying the lithium niobate wafer on which the silicon dioxide film was deposited, spin-coat a near-ultraviolet negative photoresist (ma-N1410 type of German MRT company) with a thickness of 0.5 μm on the surface of the silicon dioxide film near-ultraviolet negative i-line photoresist), and then pre-baked and exposed (the exposure dose is 270mJ / cm 2 ) and developing to complete the photolithography process to form a photoresist pattern;
[0070] (3) The lithium niobate wafer formed with the photoresist pattern is subjected to aging e...
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