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Power semiconductor devices and methods

A technology of power semiconductors and semiconductors, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as incomplete implementation

Active Publication Date: 2017-12-22
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although measures are usually provided for discharging overcurrents and voltages, these measures cannot be fully implemented

Method used

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  • Power semiconductor devices and methods
  • Power semiconductor devices and methods
  • Power semiconductor devices and methods

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Embodiment Construction

[0024] In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which are shown by way of illustration the invention can be shown in specific embodiments. In this regard, directional terms such as "top", "bottom", "front", "rear", "leading", "trailing", "lateral", "vertical", etc., The depicted orientation. Since components of the embodiments may be positioned in a number of different orientations, directional terms are used for purposes of illustration and are not limiting in any way. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. Accordingly, the following detailed description should not be taken in a limiting sense, and the scope of the invention is defined by the appended claims. The embodiments have been described using specific language which should not be construed as limiting the scope o...

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Abstract

A power semiconductor device comprising: a semiconductor body having a first side, a second side opposite the first side, and an outer rim. The semiconductor body comprises an active region, an edge termination region arranged between the active region and the outer rim, a first doped region in the active region and connected to a first electrode arranged on a first side, an region and the edge termination region and connected to the second doped region of the second electrode arranged on the second side, a drift region between the first doped region and the second doped region, the drift region comprising a first portion adjacent to the first side and a second portion disposed between the first portion and the second doped region, and an insulating region disposed in the edge termination region between the second doped region and the first portion of the drift region .

Description

technical field [0001] Embodiments described herein relate to power semiconductor devices and methods for switching high electrical power. Background technique [0002] Power semiconductor switches, especially field effect controlled switching devices such as metal oxide semiconductor field effect transistors (MOSFETs) or insulated gate bipolar transistors (IGBTs) have been used in various applications including but not limited to power supplies and power Switches in converters, electric vehicles, air conditioners, and even grids used by renewable energy providers. Especially with regard to power semiconductor devices capable of switching large currents and / or operating at higher voltages, currents propagating in edge termination regions of the power semiconductor body are a problem. [0003] As a result, semiconductor switches are prone to overcurrent and overvoltage, which may be caused by circuit faults. Although measures are generally provided for discharging overcurre...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/739H01L21/336H01L21/331
CPCH01L21/3247H01L29/0653H01L29/66068H01L29/7396H01L29/7397H01L29/7811H01L29/7813H01L29/41766H01L29/407H01L29/1095H01L29/0619H01L29/0634H01L29/0878H01L29/402H01L29/8611H01L29/0649H01L21/02365H01L21/22H01L29/36H01L21/30604H01L29/0638H01L29/1083H01L29/7395H01L29/74H01L29/7788H01L29/8083H01L29/861
Inventor H-J·舒尔策F·希尔勒A·毛德
Owner INFINEON TECH AUSTRIA AG