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A high-power crimping type igbt module current detection method

A current detection and crimping type technology, which is applied in the direction of measuring current/voltage, measuring devices, and measuring electrical variables, etc., can solve the problems of IGBT chip damage, IGBT chip current distribution imbalance, etc., to achieve module parallel current balance and realize The effect of parallel current sharing control and protection

Active Publication Date: 2017-06-23
STATE GRID CORP OF CHINA +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Parallel connection of a large number of IGBT chips or modules will lead to unbalanced current distribution of IGBT chips, and IGBT chips with high current will be damaged

Method used

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  • A high-power crimping type igbt module current detection method
  • A high-power crimping type igbt module current detection method
  • A high-power crimping type igbt module current detection method

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Embodiment Construction

[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.

[0040] In order to meet the needs of the prior art, the present invention provides a high-power crimping type IGBT module current detection method, the specific steps are as follows figure 1 Shown:

[0041] 1. Embed the Rogowski coil inside the crimp-type IGBT package to collect the current signal of the IGBT chip.

[0042] The structure of the crimp type IGBT is:

[0043] It includes an upper metal plate and a lower metal plate, the lower metal plate includes bosses arranged at equal intervals, and the IGBT chip is arranged be...

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Abstract

The invention provides a high-power pressed connection type IGBT module current detection method. The method includes the steps of firstly, embedding rogowski coils in a package of a pressed connection type IGBT, and collecting current signals in IGBT chips; secondly, regulating drive signals of the IGBT chips according to the current signals through a master control unit of the pressed connection type IGBT so that the current of the IGBT chips can be balanced, sleeving a boss corresponding to each IGBT chip with the corresponding rogowski coil if the pressed connection type IGBT is formed by connecting N IGBT chips in parallel, and using the bosses corresponding to the N IGBT chips in each IGBT module as a boss set and sleeving the boss set of each IGBT module with the corresponding rogowski coil if the pressed connection type IGBT comprises M IGBT modules which are connected in parallel and each IGBT module is formed by connecting N IGBT chips in parallel. Compared with the prior art, by means of the high-power pressed connection type IGBT module current detection method, the paralleled current sharing control and protection can be achieved for the high-power IGBT.

Description

technical field [0001] The invention relates to a method for detecting the current of an IGBT module, in particular to a method for detecting the current of a high-power crimping type IGBT module. Background technique [0002] With the large-scale access of new energy sources such as wind power and solar energy, energy allocation has changed. Renewable energy sources such as wind power and solar energy have the characteristics of intermittent and scattered. , it is difficult to meet the current development needs of the power grid. In order to meet the requirements of the power grid, the use of flexible DC transmission based on IGBT and other power electronic devices that can be turned off can solve the above-mentioned problems of DC grid networking and multi-terminalization. Therefore, the demand for megawatt-level high-power converters in the power market is increasing day by day. [0003] High-power IGBTs include soldered IGBTs and crimped IGBTs. The crimped IGBT has the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R19/00
Inventor 温家良陈中圆李金元王志霞李现兵苏莹莹
Owner STATE GRID CORP OF CHINA