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Problems solved by technology
[0004] However, diamond is difficult to do with impurities by ion implantation of other semiconductor materials, and there is a problem in the selective formation of n-type impurity-doped regions, and there is a problem that device design corresponding to the purpose cannot be carried out.
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no. 1 approach ＞
[0073] An example of an embodiment of the above-mentioned diamond semiconductor device of the present invention will be described below.
[0074] First, refer to Figure 1 ~ Figure 4 , the first embodiment of the above-mentioned diamond semiconductor device and its manufacturing process will be described together. The diamond semiconductor device according to the first embodiment constitutes a planar junction field effect transistor. In addition, in each figure, the left side shows a plane, and the right side shows a cross section.
[0075] First, a diamond substrate 1 having a crystal plane of {001} on the substrate surface is prepared, on which a p-type diamond layer doped with a p-type impurity is formed by CVD using a diamond source and a p-type impurity source as source gases 2 (see figure 1 ).
[0076] Next, etching is carried out by photolithography using a mask so that the diamond substrate 1 and the p-type diamond layer 2 have diamond steps 2' (refer to figure 2...
no. 2 approach ＞
[0082] Second, first, refer to Figure 6 ~ Figure 9 , the second embodiment of the above-mentioned diamond semiconductor device and its manufacturing process will be described together. The diamond semiconductor device according to the second embodiment involves additionally forming p + contact area. In addition, in each figure, the left side shows a plane, and the right side shows a cross section.
[0083] First, a diamond substrate 11 having a crystal plane of {001} on the substrate surface is prepared, on which p-type diamond doped with a p-type impurity is formed by CVD using a diamond source and a p-type impurity source as source gases. Layer 12a and p + Diamond layer 12b (refer to Figure 6 ).
[0084] Next, etching is carried out by photolithography using a mask so that the diamond substrate 11 and the p-type diamond layer 12a have diamond steps 12a' (refer to Figure 7 ). At this time, the first stepped portion 13 formed in the diamond stepped portion 12 a ′ has...
no. 3 approach ＞
[0090] In addition, the above-mentioned diamond semiconductor device of the present invention may have not only a planar device structure but also a vertical device structure.
[0091] As an example of a semiconductor device having a vertical device structure, a diamond semiconductor device according to a third embodiment constituting a vertical junction field effect transistor will be described with reference to FIGS. 10( a ) and ( b ). In addition, FIG. 10( a ) is an explanatory diagram partially showing a cross-sectional structure of a diamond semiconductor device according to the third embodiment, and FIG. 10( b ) is a partial plan view thereof.
[0092] As shown in FIG. 10(a) and (b), the diamond semiconductor device 30 according to the third embodiment comprises a diamond substrate 21, a p-type semiconductor layer 22, and a diamond step portion 22' formed on the p-type semiconductor layer 22. , the phosphorus-doped diamond region 25 formed on the side of the first steppe...
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Abstract
[Problem] To provide a diamond semiconductor device that has a greater degree of freedom in the device design and is able to be manufactured efficiently, and a method for manufacturing the diamond semiconductor device. [Solution] This diamond semiconductor device has a diamond substrate, a diamond step section that is disposed so as to rise in a substantially vertical manner on a substrate surface having a {001} crystal plane on the diamond substrate, a n-type phosphorus-doped diamond region, and a diamond insulating region. The diamond step section is integrally formed by a first step section having a side surface with a {110} crystal plane and a second step section having a side surface with a {100} crystal plane. The phosphorus-doped diamond region is formed by crystal growth with the side surface of the first step section and the substrate surface of the diamond substrate acting as growth substrates originating from a base angle of the step shape of the first step section. The diamond insulating region is formed by crystal growth with the side surface of the second step section and the substrate surface of the diamond substrate acting as growth substrates.
Description
technical field [0001] The present invention relates to a diamond semiconductor device utilizing selective growth of diamond crystals and a manufacturing method thereof. Background technique [0002] In order to effectively use electric power, multi-stage power conversion (AC / DC conversion, frequency conversion) is performed from power generation to power consumption, and multiple semiconductor power devices are used. Reducing the power loss of these semiconductor power devices is an important index for energy saving. [0003] Diamond has a wide bandgap compared to silicon, which is widely used as a semiconductor material, and has high melting point, thermal conductivity, insulation breakdown resistance, carrier velocity limit, hardness, elastic constant, chemical stability, and radiation resistance. It is used as an electronic device material. , especially the formation materials of semiconductor power devices have extremely high potential. [0004] However, diamond is di...
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