Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory device supporting quick query of logical circuit and access method of memory device

A technology of logic circuit and access method, which is applied in the direction of instruments, electrical digital data processing, and input/output process of data processing, etc. It can solve the problems of high error probability and low execution efficiency, and save CPU time, reduce tasks, Reduce the effect of data migration

Active Publication Date: 2015-04-29
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide a memory device and an access method thereof that support rapid query of logic circuits, which are used to solve the problem that the controller in the prior art manages the memory through the virtual memory address, causing Solved the problem of low execution efficiency and high error probability

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory device supporting quick query of logical circuit and access method of memory device
  • Memory device supporting quick query of logical circuit and access method of memory device
  • Memory device supporting quick query of logical circuit and access method of memory device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0034] see Figure 1 to Figure 3 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memory device supporting quick query of a logical circuit and an access method of the memory device. The memory device at least comprises a memory, a memory controller formed by the logical circuit and a controller, and an interface connected between the logical circuit and a server. According to the memory device and the access method, provided by the invention, data in the memory can be searched through the logical circuit, a server CPU (Central Processing Unit) is not needed to participate in the query work of the data, the time of the CPU is saved, and data migration, data query and the like are reduced, so that the tasks of the server are reduced, and the system performance is increased; the logical circuit is used for querying, and the data querying speed is faster by utilizing the parallel execution capacity of a logical circuit system.

Description

technical field [0001] The invention relates to a storage device and a method for inquiring data thereof, in particular to a storage device and an access method for supporting fast query of logic circuits. Background technique [0002] The development and innovation of today's information technology is changing various industries, and massive amounts of data are generated in the era of information explosion. And data is permeating every industry and business function today, becoming an important factor of production. The mining and application of massive data in various industries heralds the arrival of a new wave of productivity growth and consumer surplus. As stated in a column in the New York Times in February 2012, the era of "big data" has arrived. In business, economics and beyond, decisions will increasingly be based on data and analysis rather than experience and intuition. [0003] Big data is a data collection composed of huge data, complex structure, and many ty...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06
CPCG06F3/0611
Inventor 李鸽子陈小刚宋志棠陈邦明李顺芬周密
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com