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Source and drain regions protected by fin spacers in finfet

A technology of drain region and source electrode, used in electrical components, electric solid state devices, semiconductor devices, etc.

Active Publication Date: 2017-12-19
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

While existing FinFET devices and methods of fabricating FinFET devices have generally served their intended purpose, they are not entirely satisfactory in all respects

Method used

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  • Source and drain regions protected by fin spacers in finfet
  • Source and drain regions protected by fin spacers in finfet
  • Source and drain regions protected by fin spacers in finfet

Examples

Experimental program
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Effect test

Embodiment Construction

[0029] The making and using of embodiments of the invention are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are illustrative, and do not limit the scope of the invention.

[0030] According to various exemplary embodiments, fin field effect transistors (FinFETs) and methods of forming the same are provided. The intermediate stages of forming the FinFET are shown. Variations of the examples are discussed. The same reference numerals are used to refer to the same elements throughout the various views and exemplary embodiments.

[0031] Figure 1 to Figure 11 are perspective and cross-sectional views of intermediate stages in FinFET fabrication, according to some example embodiments. figure 1A perspective view of the initial structure is shown. The initial structure includes a wafer 100 including a substra...

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PUM

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Abstract

The invention provides an integrated circuit device, comprising: a semiconductor substrate, an insulating region extending into the semiconductor substrate, and a semiconductor fin protruding above the insulating region. The insulating region includes first and second portions on opposite sides of the semiconductor fin. The integrated circuit device also includes a gate stack on the top surface and sidewalls of the semiconductor fin and a semiconductor region connected to an end of the semiconductor fin. The semiconductor region includes a first semiconductor region formed of a first semiconductor material and a second semiconductor region underlying the first semiconductor region, wherein the first semiconductor region includes a top surface with a facet. The second semiconductor region has a higher germanium concentration than the first semiconductor region. A fin spacer is located on a sidewall of the second semiconductor region, wherein the fin spacer overlaps a portion of the insulating region. The invention also relates to fin spacer protected source and drain regions in FinFETs.

Description

[0001] Cross References to Related Applications [0002] This patent application is related to U.S. Patent Application No. 13 / 740,373, Attorney Docket No. TSM12-0701, entitled "Semiconductor Device and Fabricating the Same," filed January 14, 2013; 2013 U.S. Patent No. 13 / 902,322, Attorney Docket No. TSM13-0232 / 24061.2471, entitled "Semiconductor Device and Method of Fabricating Same," filed May 24; 2013____ Attorney Docket No. TSM13-1042, U.S. Patent No. 13 / xxx, xxx, filed September 3, 2013, entitled "FinFET Device and Method of Fabricating Same), U.S. Patent Application No. 14 / 017,036, Attorney Docket No. TSM12-0460, the entire contents of which are incorporated herein by reference. technical field [0003] The present invention relates generally to the field of semiconductor technology, and more particularly to fin spacer protected source and drain regions in FinFETs. Background technique [0004] The semiconductor integrated circuit (IC) industry has experienced expone...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/78H01L29/06H01L21/8234
CPCH01L21/845H01L29/66795H01L27/0924H01L27/1211H01L21/02236H01L21/02255H01L21/31116H01L27/0886H01L21/823431H01L21/823481H01L21/823821H01L29/66545H01L29/785H01L21/76224H01L29/7848H01L29/165H01L21/0217H01L21/02532H01L21/02576H01L21/30604H01L21/31111H01L21/823437H01L21/823468
Inventor 江国诚徐廷鋐王昭雄刘继文
Owner TAIWAN SEMICON MFG CO LTD