The invention discloses a method for cleanly transferring
single layer graphene by using PMMA, and relates to a method for transferring the
single layer graphene, aiming to solve the problems of an existing
graphene transferring method that existing
graphene grows unstably on a
specific substrate such as a
silicon wafer and the transferring is incomplete and
curling easily occurs. The method disclosed by the invention is as follows: first,
single layer graphene is grown on a
copper foil substrate; second, then the
copper foil substrate is coated with a PMMA glue in a suspending way, and then placed on a heating plate, heated, solidified, and trimmed; third, the
copper foil is floated on the liquid-level of corrosive liquid, and fished out until the
copper foil becomes transparent; fourth,standing in water is performed; fifth, the operation of the fourth step is repeated; sixth, the target substrate is picked up, blow-dried with
nitrogen, and baked in an oven until the surface turns purple; seventh, PMMA is added dropwise, and standing is performed; and eighth, soaking in
acetone, heating and washing are performed to complete the transfer of the single layer
graphene. The method disclosed by the invention has broad prospects in the fields of optoelectronic devices and the like.