Method and apparatus for producing thermoelectric conversion material, and sputtering target production method

A technology of thermoelectric conversion materials and sputtering targets, applied in sputtering coating, metal material coating process, ion implantation plating, etc., can solve problems such as crystal defects, uniform distribution of difficult-to-dop elements, segregation, etc.

Active Publication Date: 2013-09-11
PIONEER MATERIALS INC CHENGDU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The materials used in the prior art usually use the traditional long single crystal method to produce this alloy, which is expensive, and sometimes when manufacturing this semiconductor material, it is necessary to dop

Method used

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  • Method and apparatus for producing thermoelectric conversion material, and sputtering target production method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] First put bismuth (Bi), 57.7% tellurium (Te) and 27.3% antimony (Sb) with a weight ratio of 15.0% into the same crucible; the crucible is usually made of quartz or zirconia and other materials; this The composition of these components forms Bi 0.5 Sb 1.5 Te 3 metal compound.

[0039] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0040] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. During the heating process and the reaction process under high temperature conditions, vacuum is not applied.

[0041] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 590°C to 610°C, the heating rate is controlled at 90°C / hour to 100°C / ...

Embodiment 2

[0044] First, 0% bismuth (Bi), 40% antimony (Sb) and 60% tellurium (Te) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0045] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0046] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. Vacuum was not applied during heating and during high temperature reactions.

[0047] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 630°C to 650°C, the heating rate is controlled at 90°C / hour to 100°C / hour. Keep at this temperature for 165 minutes to 185 minutes.

[0048] Let the raw materials in the crucible full...

Embodiment 3

[0050]First, 15% bismuth (Bi), 60% tellurium (Te) and 25% antimony (Sb) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0051] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0052] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. During heating and high temperature reaction, no vacuum is applied.

[0053] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 630°C to 640°C, the heating rate is controlled at 80°C / hour to 100°C / hour. Keep at this temperature for 180 minutes to 195 minutes.

[0054] Let the raw materials in the crucible fully react u...

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Abstract

The present invention relates to the field of semiconductor materials, particularly to a method and an apparatus for producing a thermoelectric conversion material, and a method for producing a sputtering target by using the material. The thermoelectric conversion material production method comprises the following steps: (A) mixing 0-15% by mass of bismuth, 25-40% by mass of antimony and 56-63% by mass of tellurium to form a raw material; and (B) carrying out a vacuum smelting treatment on the raw material to obtain a semiconductor thermoelectric conversion material BiSbTe metal compound. According to the present invention, the vacuum smelting method is adopted to uniformly dope the metal-like element antimony (Sb) in a metal alloy of bismuth telluride in the conventional bismuth telluride material to form the metal compound BiSbTe so as to change an energy band gap of the material, such that a free hole concentration of electric carriers in the semiconductor alloy are increased, a thermal-electrical performance (ie., ZT parameter) of the material are substantially increased, and the doped element does not generate segregation or crystal defects.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for producing a thermoelectric conversion material, and also relates to a device for producing a thermoelectric conversion material and a method for producing a sputtering target with the material. Background technique [0002] Thermal-to-electrical conversion, as a new energy generation method, is a new technology application field that has only been developed in recent years. It is a kind of temperature difference, which causes the concentration of electric carriers in the material to appear gradient under the temperature difference, so that the diffusion of electric carriers occurs, resulting in the generation of electric current. Bismuth telluride (Bi 2 Te 3 ), bismuth selenide (Bi 2 Se 3 ) and other alloys are commonly used thermo-electric materials. These materials are used in thermo-electric refrigeration and power generation, among others. The use of ...

Claims

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Application Information

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IPC IPC(8): C22C1/10C22C1/02C23C14/14C23C14/34
Inventor 李宗雨丘立安汪晏清
Owner PIONEER MATERIALS INC CHENGDU
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