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Method and device for producing thermoelectric conversion material and method for producing sputtering target

A technology for thermoelectric conversion materials and sputtering targets, which can be used in thermoelectric device junction lead-out materials, thermoelectric device manufacturing/processing, sputtering plating, etc., and can solve problems such as crystal defects, high cost, segregation, etc.

Active Publication Date: 2015-12-02
PIONEER MATERIALS INC CHENGDU
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The materials used in the prior art usually use the traditional long single crystal method to produce this alloy, which is expensive, and sometimes when manufacturing this semiconductor material, it is necessary to dope other elements to adjust the concentration of the electric carrier
This traditional production method is difficult to achieve a uniform distribution of doping elements
Doped elements can produce segregation, or crystal defects

Method used

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  • Method and device for producing thermoelectric conversion material and method for producing sputtering target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] First, put 59.4% bismuth (Bi), 18.2% tellurium (Te) and 22.4% selenium (Se) into the same crucible; the crucible is usually made of materials such as quartz or zirconia.

[0039] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0040] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. Vacuum is no longer applied during heating.

[0041] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 610°C to 630°C, the heating rate is controlled at 90°C / hour to 100°C / hour. Keep at this temperature for 180 minutes to 185 minutes.

[0042] Let the raw materials in the crucible fully react under vacuum and high temperature conditions for 180...

Embodiment 2

[0044] First, 55% bismuth (Bi), 15% tellurium (Te) and 30% selenium (Se) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0045] Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0046] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. Vacuum is no longer applied during heating.

[0047] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 610°C to 630°C, the heating rate is controlled at 80°C / hour to 100°C / hour. Keep at this temperature for 170 minutes to 190 minutes.

[0048] Let the raw materials in the crucible fully react under vacuum and high te...

Embodiment 3

[0050] First, 60% bismuth (Bi), 20% tellurium (Te) and 20% selenium (Se) are put into the same crucible according to the weight ratio; the crucible is usually made of materials such as quartz or zirconia.

[0051]Place the crucible in a stainless steel vacuum vessel. The vacuum container is then placed in a well-type electric furnace, or placed directly in a vacuum well-type electric furnace.

[0052] Vacuumize the vacuum container or well-type vacuum electric furnace directly to make the vacuum degree in the container reach 1×10 -1 Pa to 1×10 -3 Pa, then seal the exhaust pipe or turn off the vacuum valve. Vacuum is no longer applied during the heating process.

[0053] The material in the crucible is heated by electromagnetic induction. Heating from room temperature to 620°C to 640°C, the heating rate is controlled at 90°C / hour to 120°C / hour. Keep at this temperature for 180 minutes to 190 minutes.

[0054] Let the raw materials in the crucible fully react under vacuum ...

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Abstract

The invention relates to the field of semiconductor materials and particularly relates to a process for producing thermoelectric conversion materials. The process comprises the steps of (A), mixing, by mass fraction, 55%-60% of bismuth (Bi), 20%-30% of selenium (Se) and 10%-20% of tellurium (Te) to constitute raw materials; and (B) performing vacuum melting treatment on the raw materials to obtain BiSeTe metallic compounds which are the semiconductor thermoelectric conversion materials. According to the process, a method of vacuum melting is used, in traditional bismuth selenide materials, metal alloys of bismuth selenide are uniformly doped with the VI group element of stibium, the BiSeTe metallic compounds are formed, and energy band gaps of the materials are changed, so that the concentration of electrical carrier free 'electrons' inside the semiconductor alloys is increased, the thermoelectric performance of the materials, that is, the so-called ZT parameter, is greatly improved, and the doped element is free from segregation or crystal defects.

Description

technical field [0001] The invention relates to the field of semiconductor materials, in particular to a method for producing a thermoelectric conversion material, and also relates to a device for producing a thermoelectric conversion material and a method for producing a sputtering target with the material. Background technique [0002] Thermal-to-electrical conversion, as a new energy generation method, is a new technology application field that has only been developed in recent years. It is a kind of temperature difference, which causes the concentration of electric carriers in the material to appear gradient under the temperature difference, so that the diffusion of electric carriers occurs, resulting in the generation of electric current. Bismuth telluride (Bi 2 Te 3 ), bismuth selenide (Bi 2 Se 3 ) and other alloys are commonly used thermo-electric materials. These materials are used in thermo-electric refrigeration and power generation, among others. The use of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/16H01L35/34C22C1/02C22C29/00B22F3/14C23C14/34H10N10/852H10N10/01
Inventor 李宗雨丘立安汪晏清
Owner PIONEER MATERIALS INC CHENGDU
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