Method for preparing garnet single crystal and garnet single crystal prepared thereby

A garnet and single crystal technology is applied in the field of the preparation of garnet single crystals and the garnet single crystals obtained therefrom, and can solve the problems of low reflectivity, unsuitable base flux and the like

Inactive Publication Date: 2006-12-13
金裕坤
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, PbO-B 2 o 3 -Bi 2 o 3 The base flux is not suitable for the preparation of magnetic garnet single crystals for photoelectric sensors that require low reflectance and high transmittance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] 67.286 g Bi 2 0 3 , 72.035 grams of PbO, 3.5 grams of B 2 o 3 , 0.556 g Y 2 o 3 , 0.516 g Gd 2 o 3 , 6.107 g Fe 2 o 3 and 1.9757 g Na 2 CO 3 Put it into a platinum crucible, then melt it at 1000°C, then cool the melt to 790°C, and prepare garnet single crystal from the melt by conventional LPE method using SGGG substrate.

Embodiment 2

[0034] A single crystal was prepared in the same manner as in Example 1, except that 4.0004 g of sodium carbonate was added.

experiment Embodiment 1

[0044] The defects of the garnet single crystals obtained in Examples 1 and 2 and Comparative Examples 1-4 were calculated. In addition, measure the thickness of residual flux after spinning off, and calculate the thickness deviation value. The results are shown in Table 1 below.

[0045] Example

serial number

composition

Na 2 CO 3

The amount (grams)

crystallization

long temperature

(℃)

thickness

(microns)

number of defects

(1 cm x 1

cm)

residual flux

Thickness (micron)

Thickness deviation

(microns)

Example 1

Bi 0.85 Pb 0.02 Y 0.60 Gd 1.53 P t0.02 Fe 4.98 o 12

1.9757

790

100

0～1

20

±1

Example 2

Bi 0.82 Pb 0.02 Y 0.66 Gd 1.56 Pt 0.02 Fe 4.98 o 12

4.0004

790

70

0～1

20

±1

Comparative example 1

Bi 0.90 Pb 0.02 ...

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PUM

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Abstract

Disclosed herein is a method for manufacturing a magnetic garnet single crystal from a melt containing an alkali metal oxide or carbide, garnet single crystal raw materials and Bi2O3-B2O3-PbO as a flux by liquid phase epitaxy (LPE) wherein the garnet single crystal is grown at a relative low temperature due to a reduced viscosity of the melt, and the grown garnet single crystal has a uniform thickness and a specular surface without any crystal defects. Further disclosed is a magnetic garnet single crystal manufactured by the method.

Description

technical field [0001] The present invention relates to a method for preparing a magnetic garnet single crystal and the magnetic garnet single crystal prepared by the method, in particular to a method using Bi 2 o 3 -B 2 o 3 - A method for preparing a magnetic garnet single crystal by liquid phase epitaxy (LPE) from a melt of PbO and a magnetic garnet single crystal prepared by the method, wherein the garnet single crystal is formed at a relatively low temperature due to a decrease in the viscosity of the melt Under growth, the grown garnet single crystal has a uniform thickness and a mirror-like surface (mirror surface) without any crystal defects. The magnetic garnet single crystals thus prepared can be used in photoelectric sensors (optical current transducers, CTs). Background technique [0002] Generally, garnet single crystals are widely used in magneto-optical devices such as photoelectric sensors, optical frequency isolators, optical switches, and spatial optical...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/28C30B19/02
CPCC30B29/28C30B19/02
Inventor 尹泰铉李钟柏裴乘铁
Owner 金裕坤
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