Water Vapor Monitoring Method for Ion Implantation Machine
An ion implantation and machine technology, which is used in the manufacture of discharge tubes, electrical components, semiconductor/solid-state devices, etc., can solve the problems of water vapor conditions of reactive ion implantation machines that cannot be directly and effectively, affecting production costs, and high construction costs.
Active Publication Date: 2017-08-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
However, the method of monitoring the vacuum condition of the ion implantation machine can reflect the vacuum condition of the ion implantation machine, but cannot directly and effectively reflect the water vapor condition of the ion implantation machine; the residual gas in the vacuum is analyzed by a residual gas analyzer The cost of the method is high, and the conditions of use are harsh, which greatly affects the production cost
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[0026] The water vapor existing in the ion implantation machine in the prior art is not easy to be detected simply and effectively. The inventors have studied the prior art and found that when ion implantation is performed on the wafer in the ion implantation machine, the water molecules will follow the The implanted ions gather on the surface of the wafer, and the oxygen element in the water molecules will react with the silicon in the wafer to form a surface oxide layer. However, if a blank wafer is placed into the ion implantation machine as a monitor wafer, the surface oxide layer is difficult to remain on the surface of the blank wafer, so that the surface oxide layer cannot be detected.
[0027] The inventors have further studied and found that if an organic layer is formed on the surface of the blank wafer, when ion implantation is performed on the wafer with the organic layer in the ion implanter, water molecules will gather on the surface of the wafer along with the im...
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The invention discloses a water vapor method of an ion implantation machine. The water vapor method of the ion implantation machine includes that a monitoring wafer is provided; an organic layer is formed on the monitoring wafer; the monitoring wafer is placed on the ion implantation machine to be subject to ion implantation; the organic layer is removed; whether a surface oxidation layer formed during ion implantation is located on the surface of the monitoring wafer is detected, and if so, the thickness of the surface oxidation layer is detected. The water vapor method of the ion implantation machine can conveniently and effectively monitor the water vapor condition of the ion implantation machine.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a water vapor monitoring method for an ion implantation machine. Background technique [0002] In semiconductor technology, ion implantation, such as P-type ions or N-type ions, is a conventional means to change the conductivity of semiconductors. Ion implantation is carried out in a vacuum machine. Existing experiments have shown that the water vapor content of the ion implantation machine will interfere with the depth and concentration of ion implantation. In some cases, even if the vacuum degree of the machine meets the requirements, the excessive water vapor content will cause the yield rate of the wafer to be too low. [0003] In the prior art, the water vapor content of the ion implantation machine is monitored by monitoring the vacuum condition of the ion implantation machine or using a residual gas analyzer to analyze the residual gas in the vacuum of...
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IPC IPC(8): H01L21/66H01L21/67
CPCH01J37/3171H01L21/265H01L22/30H01L22/34
Inventor 国子明郭国超张凌越姚蕾
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP