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SOI wafer manufacturing method

A manufacturing method and wafer technology, applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, crystal growth, etc., to achieve the effect of reducing costs and suppressing HF defects

Inactive Publication Date: 2015-05-13
SHIN-ETSU HANDOTAI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, even with this method, if a defect is confirmed in the inspection before reuse, reheat treatment is required

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] (Example 1, Comparative Examples 1-3)

[0073] Demonstration of the effect of resistance heat treatment

[0074] For a silicon wafer with a diameter of 200 mm, N-region (NPC), and an initial oxygen concentration of 12 ppma, no pretreatment (condition 1), RTA (condition 2), resistance heating treatment (condition 3) or resistance heating treatment + grinding After (Condition 4), (1) perform oxidation heat treatment at 900°C / 6hrs, (2) remove the oxide film with HF (simulated peeling), and (3) measure HF on the surface of 65 nm or more with SP1 manufactured by KLA-Tencor Defect density, (4) After grinding 5 μm, the above steps are set as the 0th regeneration number, and further repeating (1) to (4) to simulate the process of reusing the bonded wafer, and the HF defect density according to the regeneration number Compare. The result is expressed in figure 2 middle.

[0075] In addition, "simulated peeling" in (2) refers to replacing the peeling process (attachment to...

Embodiment 2

[0087] Verification of the effect due to the difference in the initial oxygen concentration between nitrogen-doped wafers and NPC wafers

[0088] For a diameter of 200mm and a nitrogen concentration of 5×10 13 atoms / cm 3 , a wafer with an initial oxygen concentration of 3-17ppma, and a wafer with a diameter of 200mm, an N-region (NPC), and an initial oxygen concentration of 3-17ppma, heat treatment at 1200°C for 60 minutes in an oxygen atmosphere, and then, with In Example 1, the simulated regeneration method was repeated five times to measure the HF defect density. The result is expressed in image 3 middle.

[0089] As a result, HF defects were not problematic in any of the wafers. Among them, when the initial oxygen concentration of the nitrogen-doped wafer is below 7ppma, and the initial oxygen concentration of the NPC wafer is below 14ppma, almost no HF defects are detected.

Embodiment 3

[0091] Fabrication of SOI Wafers 1

[0092] As a bonded wafer, prepare a mirror-polished silicon wafer with a diameter of 200 mm, an N-region (NPC), and an initial oxygen concentration of 12 ppma, and perform a process for eliminating defects of the bonded wafer at 1200° C. for 60 minutes in an oxygen atmosphere. After the heat treatment, etching was performed with HF to remove the oxide film, and the surface to be bonded was polished to 0.1 μm. Next, (i) after performing an oxidation heat treatment at 900°C / 6hrs to form an oxide film, (ii) implant hydrogen ions through the oxide film (implantation conditions are: acceleration energy is 70keV, implantation amount is 6×10 16 / cm 2 ), (iii) after bonding the ion-implanted bonded wafer to the base wafer (silicon wafer) at room temperature, the ion-implanted layer is peeled off by applying a peeling heat treatment at 500° C. for 30 minutes, Fabricate SOI wafers.

[0093] At this time, a peeled wafer separated from the SOI waf...

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PUM

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Abstract

This SOI wafer manufacturing method is characterized in performing, prior to an oxide film forming step: a step for performing heat treatment under an oxidizing atmosphere at a temperature of 1,100-1,250 °C for 30-120 minutes with respect to a silicon wafer that has been prepared; and a step for polishing, after the heat treatment, a silicon wafer surface to be a bonding surface. Consequently, provided is the SOI wafer manufacturing method whereby SOI wafers having almost no failure, i.e., a defect or the like, can be manufactured by sufficiently eliminating defects of bond wafers in SOI wafer manufacture, and furthermore, peeled wafers generated as a by-product in an ion implantation peeling method can be reused many times as the bond wafers.

Description

technical field [0001] The present invention relates to a kind of manufacturing method of SOI wafer, and it is to manufacture SOI (Silicon on Insulator) wafer after sticking the wafer implanted with ions and then peeling off. A method of manufacturing an SOI wafer by peeling off (Smart Cut (registered trademark) method). Background technique [0002] As a method of manufacturing an SOI wafer, there is typically an ion implantation lift-off method. [0003] The ion implantation stripping method will be briefly described. First, two silicon wafers are prepared as a bonded wafer and a base wafer, and a buried oxide layer to become an SOI wafer is formed on at least one silicon wafer, for example, on the bonded wafer. After the oxide film of the film is formed, ion implantation is performed through the oxide film from the surface of the silicon wafer on which the oxide film is bonded, an ion implantation layer is formed in the silicon wafer, and the ion implantation layer is fo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02C30B29/06C30B31/22C30B33/02H01L21/265H01L21/324H01L27/12
CPCC30B29/06C30B31/22C30B33/06H01L21/02164H01L21/02238H01L21/02255H01L21/3226H01L21/76254H01L21/02032
Inventor 曲伟峰田原史夫大井裕喜
Owner SHIN-ETSU HANDOTAI CO LTD