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A MOS transistor circuit with gate bias compensation

A technology of MOS transistors and transistors, applied in circuits, logic circuits, electrical components, etc., can solve problems such as greater impact on circuit performance, and achieve the effect of reducing power loss

Active Publication Date: 2017-10-20
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a MOS transistor circuit with gate bias compensation, which is used to solve the problem in the prior art that the circuit performance is greatly affected by changes in PVT

Method used

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  • A MOS transistor circuit with gate bias compensation
  • A MOS transistor circuit with gate bias compensation
  • A MOS transistor circuit with gate bias compensation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] see figure 2 Schematic diagram of Embodiment 1 of the MOS transistor circuit with gate bias compensation of the present invention.

[0039] The MOS transistor circuit includes: a resistor element, a first NMOS transistor and a second NMOS transistor, wherein the resistor element is connected in series with the first NMOS transistor, and the second NMOS transistor is connected to the resistor element and the second NMOS transistor through a gate. An NMOS transistor is connected. Specifically, the gate of the first NMOS transistor and one end of the resistor element are connected to the power supply voltage, the sources of the first NMOS transistor and the second NMOS transistor are grounded, and the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor pole and the other end of the resistor element, and the drain of the second NMOS transistor is connected to the current output end.

[0040] Such as figure 2 As shown, M0 is the sec...

Embodiment 2

[0052] see image 3 Schematic diagram of Embodiment 2 of the MOS transistor circuit with gate bias compensation of the present invention.

[0053] Different from Embodiment 1, this embodiment adds a PMOS transistor with switching function. The MOS transistor circuit includes: a resistor element, a first NMOS transistor, a second NMOS transistor and a PMOS transistor, wherein the resistor element, the PMOS transistor and the first NMOS transistor are connected in series, and the second NMOS transistor is connected to the first NMOS transistor through a gate. The resistor element is connected to the first NMOS transistor. Specifically, the gate of the first NMOS transistor and the source of the PMOS transistor are connected to the power supply voltage, the sources of the first NMOS transistor and the second NMOS transistor are grounded, and the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor and One end of the resistor element, the dra...

Embodiment 3

[0056] see Figure 4 A schematic diagram of Embodiment 3 of the MOS transistor circuit with gate bias compensation of the present invention.

[0057]The MOS transistor circuit includes: a resistor element, a first PMOS transistor and a second PMOS transistor, wherein the resistor element is connected in series with the first PMOS transistor, and the second PMOS transistor is connected to the resistor element and the second PMOS transistor through a gate. A PMOS transistor is connected. Specifically, the gate of the first PMOS transistor and one end of the resistor element are grounded, the sources of the first PMOS transistor and the second PMOS transistor are connected to the power supply voltage, and the gate of the second PMOS transistor is connected to the drain of the first PMOS transistor pole and the other end of the resistor element, and the drain of the second PMOS transistor is connected to the current output end.

[0058] Such as Figure 4 As shown, M4 is the fir...

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PUM

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Abstract

The present invention provides a MOS transistor circuit with gate bias compensation, which is characterized in that it at least includes: a resistor element; a MOS semiconductor component, including a first MOS semiconductor element and a second MOS semiconductor element; wherein the resistor An element is connected in series with the first MOS semiconductor element, and the second MOS semiconductor element is connected to the resistor element and the first MOS semiconductor element through a gate. According to the characteristic that polysilicon resistance is less affected under different PVT process angles, and MOS transistor resistance is greatly affected, the present invention realizes gate bias compensation under different PVT process angles, so that the output current is basically not affected by PVT changes , to avoid the reduction of the circuit qualification rate.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a MOS transistor circuit with gate bias compensation. Background technique [0002] The rapid development of the semiconductor industry has enabled the spread of electronic devices and information technology over the past three decades. Integrated circuits (ICs) fabricated on sheets (chips) of silicon (the main semiconductor material) can efficiently and cheaply perform many electronic functions (computation, signal processing, information storage, etc.), and they are actually used in today's each electronic device. [0003] Transistors are the basic electronic components used in ICs. Modern microprocessors in slightly larger than 1cm 2 More than five million transistors are used on a silicon chip. By reducing the size of the component modules, the size of the IC has been reduced accordingly. The smaller the area required for a single IC, the greater the number of ICs that...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K19/094H01L27/02
Inventor 朱恺陈捷莫善岳郭之光陈艳
Owner SEMICON MFG INT (SHANGHAI) CORP