Unlock instant, AI-driven research and patent intelligence for your innovation.

MOS transistor circuit having gate bias compensation

A technology of MOS transistors and transistors, applied in circuits, logic circuits, electrical components, etc., can solve problems such as greater impact on circuit performance, and achieve the effect of reducing power loss

Active Publication Date: 2015-05-20
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a MOS transistor circuit with gate bias compensation, which is used to solve the problem in the prior art that the circuit performance is greatly affected by changes in PVT

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOS transistor circuit having gate bias compensation
  • MOS transistor circuit having gate bias compensation
  • MOS transistor circuit having gate bias compensation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] see figure 2 Schematic diagram of Embodiment 1 of the MOS transistor circuit with gate bias compensation of the present invention.

[0039] The MOS transistor circuit includes: a resistor element, a first NMOS transistor and a second NMOS transistor, wherein the resistor element is connected in series with the first NMOS transistor, and the second NMOS transistor is connected to the resistor element and the second NMOS transistor through a gate. An NMOS transistor is connected. Specifically, the gate of the first NMOS transistor and one end of the resistor element are connected to the power supply voltage, the sources of the first NMOS transistor and the second NMOS transistor are grounded, and the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor pole and the other end of the resistor element, and the drain of the second NMOS transistor is connected to the current output end.

[0040] Such as figure 2 As shown, M0 is the sec...

Embodiment 2

[0052] see image 3 Schematic diagram of Embodiment 2 of the MOS transistor circuit with gate bias compensation of the present invention.

[0053] Different from Embodiment 1, this embodiment adds a PMOS transistor with switching function. The MOS transistor circuit includes: a resistor element, a first NMOS transistor, a second NMOS transistor and a PMOS transistor, wherein the resistor element, the PMOS transistor and the first NMOS transistor are connected in series, and the second NMOS transistor is connected to the first NMOS transistor through a gate. The resistor element is connected to the first NMOS transistor. Specifically, the gate of the first NMOS transistor and the source of the PMOS transistor are connected to the power supply voltage, the sources of the first NMOS transistor and the second NMOS transistor are grounded, and the gate of the second NMOS transistor is connected to the drain of the first NMOS transistor and One end of the resistor element, the dra...

Embodiment 3

[0056] see Figure 4 A schematic diagram of Embodiment 3 of the MOS transistor circuit with gate bias compensation of the present invention.

[0057]The MOS transistor circuit includes: a resistor element, a first PMOS transistor and a second PMOS transistor, wherein the resistor element is connected in series with the first PMOS transistor, and the second PMOS transistor is connected to the resistor element and the second PMOS transistor through a gate. A PMOS transistor is connected. Specifically, the gate of the first PMOS transistor and one end of the resistor element are grounded, the sources of the first PMOS transistor and the second PMOS transistor are connected to the power supply voltage, and the gate of the second PMOS transistor is connected to the drain of the first PMOS transistor pole and the other end of the resistor element, and the drain of the second PMOS transistor is connected to the current output end.

[0058] Such as Figure 4 As shown, M4 is the fir...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides an MOS transistor circuit having gate bias compensation. The MOS transistor circuit is characterized by at least including: a resistor element and an MOS semiconductor assembly which includes a first MOS semiconductor element and a second MOS semiconductor element; wherein the resistor element is connected to the first MOS semiconductor element in series, and the second MOS semiconductor element is connected to the resistor element and the first MOS semiconductor element via a gate. The MOS transistor circuit achieves gate bias compensation under different PVT process corners according to a characteristic that the resistance of a polycrystalline silicon is little influenced but the resistance of a MOS transistor is heavily influenced under different PVT process corners. Therefore, output current is basically not influenced by a PVT change and a decrease in the qualified rate of the circuits is prevented.

Description

technical field [0001] The invention relates to the field of integrated circuits, in particular to a MOS transistor circuit with gate bias compensation. Background technique [0002] The rapid development of the semiconductor industry has enabled the spread of electronic devices and information technology over the past three decades. Integrated circuits (ICs) fabricated on sheets (chips) of silicon (the main semiconductor material) can efficiently and cheaply perform many electronic functions (computation, signal processing, information storage, etc.), and they are actually used in today's each electronic device. [0003] Transistors are the basic electronic components used in ICs. Modern microprocessors in slightly larger than 1cm 2 More than five million transistors are used on a silicon chip. By reducing the size of the component modules, the size of the IC has been reduced accordingly. The smaller the area required for a single IC, the greater the number of ICs that...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/094H01L27/02
Inventor 朱恺陈捷莫善岳郭之光陈艳
Owner SEMICON MFG INT (SHANGHAI) CORP