Multi-mode thin film deposition apparatus and method of depositing a thin film
A thin film deposition, multi-mode technology, applied in coating, gaseous chemical plating, electric solid device, etc., can solve the problems of increased duty cycle and gas usage
Active Publication Date: 2015-06-03
IND TECH RES INST
View PDF8 Cites 13 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, if the gas shower head of the plasma-assisted chemical vapor deposition process is only used to carry out the atomic layer deposition process, the process gas will need to fill the entire gas shower head and the process chamber space to achieve a saturated distribution. Increased duty cycle and gas usage
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0040] figure 1 It is a schematic diagram of a multi-mode thin film deposition device according to an embodiment of the present invention. Please refer to figure 1 , which is a multi-mode thin film deposition device according to an embodiment of the present invention. The multi-mode film deposition device 1 includes a reaction chamber 10 , a carrier 20 , a first gas inlet system 30 , a gas shower head 40 , an inert gas supply source 50 and a second gas inlet system 60 . The reaction chamber 10 has a first opening 12 and a second opening 14 . The opening directions of the first opening 12 and the second opening 14 may be in the same axial direction so as to traverse the entire reaction chamber 10 . The carrier 20 is disposed in the reaction chamber 10 and is suitable for carrying a substrate 22 . For example, in this embodiment, the multi-mode thin film deposition equipment 1 may further include a lifting mechanism 24 for the bearing base, connected to the bearing base 20 , ...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
A multi-mode thin film deposition apparatus including a reaction chamber, a carrying seat, a showerhead, an inert gas supplying source, a first gas inflow system and a second gas inflow system is provided. The carrying seat is disposed in the reaction chamber. The showerhead has a gas mixing room and gas holes disposed at a side of the gas mixing room. The gas mixing room is connected to the reaction chamber through the plurality of gas holes which faces the carrying seat. The first gas inflow system is connected to the reaction chamber and supplies a first process gas during a first thin film deposition process mode. The inert gas supplying source is connected to the gas mixing room for supplying an inert gas. The second gas inflow system is connected to the gas mixing room to supply a second process gas during a second thin film deposition process mode.
Description
technical field [0001] The invention relates to a thin film deposition equipment and a thin film deposition method, in particular to a multi-mode thin film deposition equipment and a thin film deposition method. Background technique [0002] Organic semiconductor materials and low work function electrodes in Organic Light-Emitting Diodes (OLEDs) are extremely susceptible to degradation by oxygen and moisture. Effective packaging technology to increase component stability and service life has always been the commercialization of OLEDs. Process challenges. Traditional encapsulation methods are costly to produce, and are not flexible, so they cannot meet the demand. It has become a trend to prepare flexible barrier films by using atomic layer deposition (ALD) or plasma assisted chemical vapor deposition (PECVD) film encapsulation technology. [0003] The atomic layer deposition process deposits highly dense and low-defect inorganic films such as aluminum oxide (Al 2 o 3 ), ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455
CPCC23C16/45536C23C16/45544C23C16/50H01J37/32091H01J37/3244H01L21/0228C23C16/455H01L21/02274H10K50/844C23C16/45548C23C16/4583C23C16/505
Inventor 林龚樑陈建志董福庆陈志勇林士钦林冠宇张家豪吴学宪
Owner IND TECH RES INST