Multimode thin film deposition apparatus and thin film deposition method
A thin film deposition, multi-mode technology, applied in coating, gaseous chemical plating, electric solid device, etc., can solve the problems of increased duty cycle and gas usage
Active Publication Date: 2017-04-12
IND TECH RES INST
View PDF8 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Therefore, if the gas shower head of the plasma-assisted chemical vapor deposition process is only used to carry out the atomic layer deposition process, the process gas will need to fill the entire gas shower head and the process chamber space to achieve a saturated distribution. Increased duty cycle and gas usage
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0040] figure 1 It is a schematic diagram of a multi-mode thin film deposition apparatus according to an embodiment of the present invention. Please refer to figure 1 , Which is a multi-mode thin film deposition apparatus according to an embodiment of the present invention. The multi-mode thin film deposition apparatus 1 includes a reaction chamber 10, a supporting base 20, a first air inlet system 30, a gas spray head 40, an inert gas supply source 50 and a second air inlet system 60. The reaction chamber 10 has a first opening 12 and a second opening 14, and the opening directions of the first opening 12 and the second opening 14 may be the same axial direction, and pass through the entire reaction chamber 10 transversely. The supporting base 20 is disposed in the reaction chamber 10 and is suitable for supporting the substrate 22. For example, in this embodiment, the multi-mode thin film deposition apparatus 1 may further include a supporting base lifting mechanism 24 conne...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
The invention discloses a multi-mode thin film deposition equipment and a thin film deposition method. The multi-mode film deposition equipment includes a reaction chamber, a bearing seat, a gas shower head, an inert gas supply source, a first gas inlet system and a second gas inlet system. The bearing seat is arranged in the reaction chamber. The gas spray head has a gas mixing chamber and a plurality of air holes located on one side of the gas mixing chamber, and the air holes face the bearing seat so that the gas mixing chamber communicates with the reaction chamber. The first gas inlet system is connected to the reaction chamber and provides the first process gas needed in the first film deposition mode. The inert gas supply source is connected to the gas mixing chamber to provide inert gas. The second gas inlet system is connected to the gas mixing chamber and provides the second manufacturing process gas needed in the second film deposition mode.
Description
Technical field [0001] The invention relates to a thin film deposition equipment and a thin film deposition method, in particular to a multi-mode thin film deposition equipment and a thin film deposition method. Background technique [0002] Organic light-emitting diodes (Organic Light-Emitting Diode, OLED) organic semiconductor materials and low work function electrodes are very susceptible to oxygen and moisture degradation, effective packaging technology to increase the stability and service life of the device has always been the commercialization of organic light-emitting diodes Process challenges. The traditional packaging method has a high manufacturing cost and is not flexible and cannot meet the demand. The use of atomic layer deposition (ALD) or plasma-assisted chemical vapor deposition (PECVD) thin film packaging technology to prepare flexible barrier films has become a trend. [0003] Atomic layer deposition process deposits high-density and low-defect inorganic thin f...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/455
CPCC23C16/45536C23C16/45544C23C16/50H01J37/32091H01J37/3244H01L21/0228C23C16/455H01L21/02274H10K50/844C23C16/45548C23C16/4583C23C16/505
Inventor 林龚樑陈建志董福庆陈志勇林士钦林冠宇张家豪吴学宪
Owner IND TECH RES INST