Lithographic alignment mark structure and manufacturing method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- SHANGHAI HUALI MICROELECTRONICS CORP
- Publication Date
- 2017-06-16
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Abstract
Description
technical field
[0001] The invention relates to the field of semiconductor manufacturing, in particular to a photolithographic alignment mark structure and a manufacturing method thereof. Background technique
[0002] With the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width, the area of semiconductor devices is becoming smaller and smaller, and the layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density and multi-functional integrated circuits; From the initial IC (integrated circuit) to LSI (large-scale integrated circuit), VLSI (very large-scale integrated circuit), until today's ULSI (ultra-large-scale integrated circuit), the area of the device is further reduced, and the functions are more comprehensive and powerful. Considering the complexity of process research and development, long-term and high cost and other unfavorable factors, how to furth...