White capacitive touch screen and preparation method thereof
A capacitive touch screen, white technology, applied in the direction of electrical digital data processing, instruments, data processing input/output process, etc., can solve the problems of restricting the development of white OGS, material limitations, and high cost of white OGS preparation
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[0040] Such as figure 2 As shown, the method for preparing a white capacitive touch screen according to one embodiment can be used to prepare the above-mentioned white capacitive touch screen. The preparation method of this white capacitive touch screen comprises the steps:
[0041] Step S210 : sequentially forming a niobium pentoxide layer, a white shielding layer, a black shielding layer, a silicon dioxide layer and a first conductive layer on the substrate.
[0042] Wherein, the substrate is a glass substrate. Preferably, the thickness of the substrate is 0.3-1.1 mm.
[0043] Wherein, the thickness of the niobium pentoxide layer is 50-200 angstroms. Wherein, the method for forming the niobium pentoxide layer is vacuum sputtering.
[0044] The material of the white shielding layer is white photoresist, for example, white photoresist SPW1000 of New Applied Materials Co., Ltd. Wherein, the white photoresist is a photoresist containing titanium dioxide, a polymer resin, a...
Embodiment 1
[0067] The preparation of the white capacitive touch screen of the present embodiment is as follows:
[0068] (1) A glass substrate is provided, and a niobium pentoxide layer with a thickness of 50 angstroms is formed by vacuum sputtering sequentially on one surface of the glass substrate with a thickness of 0.3mm, and a white shielding layer with a thickness of 1 micron is formed by photolithography, and photolithography A black shielding layer with a thickness of 3 microns is formed, a silicon dioxide layer with a thickness of 600 angstroms is formed by vacuum sputtering, and a first ITO conductive layer with a thickness of 200 angstroms is formed by vacuum sputtering, wherein the material of the white shielding layer is white BM, the material of the black light-shielding layer is black BM.
[0069] (2) Coating OC insulating glue on the first conductive layer, and baking at 250° C. for 30 minutes to form a first insulating layer with a thickness of 1 micron.
[0070] (3) Va...
Embodiment 2
[0074] The preparation of the white capacitive touch screen of the present embodiment is as follows:
[0075] (1) A glass substrate is provided, and a niobium pentoxide layer with a thickness of 200 angstroms is formed by vacuum sputtering sequentially on one surface of the glass substrate with a thickness of 1.1 mm, a white shielding layer with a thickness of 3 microns is formed by photolithography, and a white shielding layer is formed by photolithography. Forming a black shielding layer with a thickness of 1 micron, vacuum sputtering to form a silicon dioxide layer with a thickness of 300 angstroms and vacuum sputtering to form a first ITO conductive layer with a thickness of 1500 angstroms, wherein the material of the white shielding layer is white Photoresist, the material of the black light-shielding layer is black photoresist.
[0076] (2) Coating OC insulating glue on the first conductive layer, and baking at 200° C. for 60 minutes to form a first insulating layer with...
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Abstract
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