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Pixel definition layer of light-emitting display and its manufacturing method

A pixel definition layer and light-emitting display technology, which is applied in semiconductor/solid-state device manufacturing, photovoltaic power generation, electric solid-state devices, etc., can solve problems such as cathode-anode short circuit, light-emitting area reduction, and cathode discontinuous light-emitting area reduction, so as to facilitate the manufacturing process , The effect of improving light and color efficiency

Active Publication Date: 2017-11-24
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In the current positive trapezoidal pixel definition layer, the spreading effect of the organic layer after the hydrophobic treatment of the pixel definition layer is poor, and there will be an unspread area at the edge of the conductive glass and the pixel definition layer. After the cathode is evaporated, it is easy to cause a short circuit between the cathode and the anode, resulting in leakage.
The inverted trapezoidal pixel boundary layer will make the spread of the ink in the pixel better, but it will cause the cathode to reduce the discontinuous light-emitting area. To avoid this phenomenon, it is necessary to increase the extra film thickness or plate the cathode very thick.
On the basis of the positive trapezoid, the preparation of double-layer pixel definition layer can avoid the phenomenon of negative-anode short-circuit in the single-layer pixel definition layer, but at the same time, it may cause the reduction of the light-emitting area.

Method used

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  • Pixel definition layer of light-emitting display and its manufacturing method
  • Pixel definition layer of light-emitting display and its manufacturing method
  • Pixel definition layer of light-emitting display and its manufacturing method

Examples

Experimental program
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Effect test

Embodiment approach 1

[0044] Manufacturing method embodiment 1, this embodiment takes the manufacturing of a pixel defining layer composed of three sub-pixels as an example, and the specific steps are as follows:

[0045] As attached Figure 4 As shown, a substrate 1 is provided, and a layer of positive photoresist 11 is coated on the conductive layer of the substrate 1. In this embodiment, the substrate 1 uses but is not limited to conductive glass. The conductive glass is formed by forming a layer of transparent conductive oxide on the upper surface of the transparent glass by means of sputtering or ion electrophoresis. The oxide is oxide. Indium tin, aluminum zinc oxide, indium zinc oxide.

[0046] Such as Figure 5 As shown, after exposing and developing the positive photoresist 11, a mask is used to lithographically etch a plurality of openings 3 corresponding to the light-emitting regions of each sub-pixel unit on the positive photoresist, so that adjacent There is a spacer matrix 4 between the o...

Embodiment approach 2

[0049] The second embodiment of the manufacturing method, this embodiment takes the manufacturing of a pixel defining layer composed of three sub-pixels as an example, and the specific steps are as follows:

[0050] Such as Picture 8 As shown, a substrate 1 is provided, and a layer of negative photoresist 12 is coated on the conductive layer of the substrate 1.

[0051] Such as Picture 9 As shown, after exposing and developing the negative photoresist 12, a mask is used to lithographically etch a plurality of openings 3 corresponding to the light-emitting regions of each sub-pixel unit on the negative photoresist 12 to make the A spacer base 4 is provided between adjacent openings 3 to form a base film layer 2. The longitudinal section of the spacer base 4 is an inverted trapezoid.

[0052] Such as Picture 10 As shown, the upper surface of the spacer substrate 4 and the side walls and bottom walls of the opening 3 are sprayed with a hydrophobic quantum dot material 5, and the si...

Embodiment approach 3

[0055] The third embodiment is different from the embodiment in that: the upper surface of the spacer substrate and the side wall of the opening are sprayed with hydrophilic quantum dot material, or the upper surface of the spacer substrate and the side wall and bottom wall of the opening are sprayed with hydrophilicity. The quantum dot material uses the replacement of functional groups to change the hydrophilic quantum dot material on the upper surface of the spacer into a hydrophobic quantum dot material.

[0056] It should be noted that the spraying of the present invention adopts nozzle spraying or arc spraying.

[0057] The pixel defining layer manufactured according to the above method for manufacturing the pixel defining layer includes a base film layer, and the sidewalls of the opening of the base film layer or the sidewalls and bottom walls of the opening are coated with a hydrophilic quantum dot material, and The upper surface of the spacer substrate is coated with hydrop...

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Abstract

The present invention relates to the field of display technology, and discloses a pixel defining layer of a light-emitting display. The pixel defining layer is arranged on a conductive layer of a substrate. It is characterized in that it includes a base film layer, and the base film layer has a plurality of The opening corresponding to the light-emitting area of ​​each sub-pixel unit, a spacer matrix is ​​formed between the adjacent openings; the upper surface of each spacer matrix has a hydrophobic quantum dot material, and the side wall of each opening has hydrophilicity quantum materials. The invention also provides a manufacturing method of the pixel defining layer of the light emitting display. The invention ensures that the ink in the pixel will not overflow to the outside of the sub-pixel to cause color mixing between adjacent pixels.

Description

Technical field [0001] The present invention relates to the field of display technology, in particular to a pixel defining layer of a light-emitting display and a manufacturing method thereof. Background technique [0002] The film forming methods of OLED (organic light emitting diode) mainly include vapor deposition process and solution process. The vapor deposition process is relatively mature in small size applications, and the technology has been applied in mass production. The solution process OLED film forming methods mainly include inkjet printing, nozzle coating, spin coating, screen printing, etc. Among them, the printing technology is considered to be the realization of large-size OLED due to its high material utilization rate and can achieve large size. An important way to produce. [0003] The inkjet printing process requires that a pixel defining layer (Bank) be made on the electrode of the substrate in advance to limit the ink droplets to accurately flow into the de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/52H01L51/56
CPCY02E10/549Y02P70/50H10K59/173H10K71/135H10K59/122H10K71/191H10K77/10H10K50/115
Inventor 洪晓雯洪豪志
Owner BOE TECH GRP CO LTD
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