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Management and control method of flash memory

A technology of flash memory and large-capacity memory, applied in static memory, memory system, read-only memory, etc.

Active Publication Date: 2018-05-08
VTESCO TECH GMBH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when it is expected to update small data packets that change over time, it is impossible to overwrite (écraser) old data with current data

Method used

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  • Management and control method of flash memory
  • Management and control method of flash memory
  • Management and control method of flash memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] figure 1 The flash memory is illustrated very schematically. The memory consists of multiple sectors and figure 1 Two of these are schematically represented by rectangles. figure 1 Thus a sector called S1 is shown, as well as a sector called Sn, which is also in the figure 1 are shown on an enlarged scale.

[0038] exist figure 1In the zoomed-in detail of , first notice data page 2. Below the group of data pages 2, there is a first block each time, which takes the form in the example of block footer BF. A group of data pages 2 may contain zero, one or more data pages 2 . The structure of the block foot BF will be described in more detail in the following description.

[0039] Each sector of the flash memory also contains at least one management block AB containing information useful for the reading of the data located in that sector. figure 1 A first management block AB1 and a second management block ABn are illustrated. In a novel way, these management blocks ...

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PUM

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Abstract

A method of managing a rewritable mass memory subdivided into sectors within which data pages are recorded, and data periodically updated, where data erasure in a sector erases all previously written data therein. The method includes: writing pieces of data in a sector, each piece being associated with a first block containing at least one information for identifying the data piece, writing information data in an administrative block for managing the data of the sector concerned in the sector, each block being written among other data of the sector and being associated with a second block including one information piece and one check information piece, a block including a first part giving general indications and a second part including a counter being incremented at each writing of an administrative block in a new sector, each first block including a check number which is based on the corresponding administrative block counter.

Description

technical field [0001] The field of the invention is that of memory management in a calculateur. There are many types of electronic memory, which exhibit occasionally different modes of operation. The present invention relates more particularly to memories known as flash memories. It is here a rewritable semiconductor mass memory. Such a memory thus has the characteristics of a random access memory (RAM). However, it presents the advantage that the stored data does not disappear when the memory is no longer powered. Background technique [0002] Flash memory is used, for example, in popular devices, such as, for example, USB disks (abbreviated as “Universal Serial Bus” in English, ie Universal Serial Bus). Since their prices are not too high, these flash memories are increasingly used in industry. It is then replacing memories of the EEPROM type that are commonly used, for example, in industrial computers. [0003] The term EEPROM is an English acronym for "Electricall...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02G11C29/00G06F3/06
CPCG06F3/0614G06F3/064G06F3/0679G06F12/0246G06F2212/7207G06F2212/7209G11C16/349G11C29/82G06F2212/7205G06F2212/7206
Inventor N.布尔西尔A.梅尔瓦尔德
Owner VTESCO TECH GMBH