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Structure and preparation method of a strained thin film

A strained film and pipeline technology, which is used in electric/magnetic solid deformation measurement, semiconductor/solid-state device manufacturing, electromagnetic measurement devices, etc. Pipeline maintenance cost, high sensitivity effect

Active Publication Date: 2018-01-02
泰州市齐大贸易有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Underground pipelines include cables, heating pipes, water supply pipes, gas pipes, etc. Since they are buried underground, once a rupture occurs, they cannot be located immediately, which brings inconvenience to the maintenance of management personnel
What's more, it can cause more serious danger after being unable to locate immediately, resulting in the loss of personnel and property
Underground pipelines live in the dark and dark underground for a long time. Even if a leak occurs, it is mostly sensed based on the sensor measuring the amount of the leaking object. In consideration of cost, the sensors are set at a certain distance and cannot be spread throughout the pipeline. The sensing speed and sensing effect are greatly reduced, and some small cracks on the pipeline cannot be sensed in time, and it is possible to sense only after a leak occurs, and often small cracks are easy to repair, and once a leak occurs, then It is very likely to cause heavy loss of property, or even casualty

Method used

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  • Structure and preparation method of a strained thin film
  • Structure and preparation method of a strained thin film
  • Structure and preparation method of a strained thin film

Examples

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preparation example Construction

[0037] The preparation method of the strained film is as follows:

[0038] A. A channel is formed on the silicon substrate, and a plurality of piezoresistors are covered on the channel,

[0039]B. A plurality of piezoresistors are arranged in two rows and form a Wheatstone bridge arm.

[0040] C. The plurality of piezoresistors seal the channel to form a vacuum channel,

[0041] D. The part of the plurality of piezoresistors corresponding to the vacuum channel is a stress concentration area,

[0042] F, forming a drain region on a silicon substrate,

[0043] G. Forming a source region and a drift region on both sides of the channel on the silicon substrate, and setting a protective layer between the channel and the source region and the drift region.

[0044] The size of the strained film is width: 1-10cm, and the distance between two adjacent strained films is 10-20cm.

[0045] This embodiment also provides a method for testing ground network pipelines based on Beidou pos...

Embodiment 2

[0052] refer to Figure 4 As shown, this embodiment is basically the same as Embodiment 1, except that every n ring-shaped strained thin films 2 are connected in parallel through wires 10 to form a strained thin film group B. The equivalent circuit is also the same as that of the first embodiment. The equivalent resistance of the strained film group B is Ri, and this equivalent circuit is connected to the b terminal of the rectifier circuit 5. When the pipeline 1 is broken or slightly deformed, the corresponding annular strained film 2 is slightly deformed or broken, so that the strain The equivalent resistance Ri of the film group B changes. At this time, the resistance value is sent to the main control circuit 8 after the rectification circuit 5, the filter circuit 6, and the A / D conversion circuit 7. After monitoring the corresponding resistance value, it can be obtained The equivalent resistance of which strained film group B has changed, and the calculation result is sen...

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Abstract

The invention relates to the technical field of underground pipeline measurement, particularly to a structure and a preparation method of a strain membrane. The structure comprises a silicon substrate, wherein a channel is formed on the silicon substrate, multiple piezoresistors cover the channel, are divided into two rows to form Wheatstone bridge arms and seal the channel to form a vacuum channel, parts, corresponding to the vacuum channel, of the multiple piezoresistors are stress concentration regions, a source region, a drain region and a drift region are also formed in the silicon substrate, the channel is formed between the source region and the drift region, and the channel is isolated from the source region and the drift region through a protective layer. The method is used for preparing the strain membrane adopting the structure. The strain membrane is high in sensitivity.

Description

technical field [0001] The invention relates to the technical field of underground pipeline measurement, in particular to a strain film-based structure and a preparation method. Background technique [0002] With the development of urban construction, the scale and types of underground pipeline distribution are increasing dramatically. Underground pipelines include cables, heating pipelines, water supply pipelines, gas pipelines, etc., because they are buried underground, once they break, they cannot be located immediately, which brings inconvenience to the maintenance of management personnel. What's more, it can cause more serious danger after being unable to locate immediately, resulting in the loss of personnel and property. Underground pipelines live in the dark and dark underground for a long time. Even if a leak occurs, it is mostly sensed based on the sensor measuring the amount of the leaking object. In consideration of cost, the sensors are set at a certain distanc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L21/822G01B7/16G01S19/14
Inventor 巫立斌
Owner 泰州市齐大贸易有限公司
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