Unlock instant, AI-driven research and patent intelligence for your innovation.

Semiconductor device and method of manufacturing the same

A technology for semiconductors and devices, applied in the field of semiconductor devices and their manufacturing, can solve the problem of difficulty in obtaining polarization charges and the like

Inactive Publication Date: 2015-08-05
FUJITSU SEMICON LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the conventional ferroelectric memory has a problem that it is not easy to obtain the required amount of polarization charge when miniaturizing the ferroelectric capacitor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0030] First, the first embodiment will be explained. Figure 2A with Figure 2B are schematic diagrams each showing the structure of the semiconductor device according to the first embodiment.

[0031] Such as Figure 2A with Figure 2B As shown, in the semiconductor device according to the first embodiment, a plurality of ferroelectric capacitors 101, a plurality of switching elements 102, a plurality of word lines 103, a plurality of bit lines 104, and a plate line 105 are provided. In each ferroelectric capacitor 101, a bottom electrode, a capacitor insulating film, and a top electrode are provided. Each of the switching elements 102 is connected to one ferroelectric capacitor 101, respectively. Each of the word lines 103 turns on and off two or more switching elements 102 . Each of the bit lines 104 is connected to two or more switching elements 102 . The plate wire 105 is connected to some or all of the ferroelectric capacitors 101 selected from the plurality of fe...

no. 2 example

[0034] Next, a second embodiment will be described. The second embodiment is an example of a ferroelectric memory. Figure 3A is a circuit diagram showing the structure of a semiconductor device according to the second embodiment, Figure 3B is a cross-sectional view showing the structure of the semiconductor device according to the second embodiment.

[0035] Such as Figure 3B As shown, a memory cell region 301 and a peripheral circuit region 302 are provided in the second embodiment. Such as Figure 3A As shown, a plurality of ferroelectric capacitors 201 , a plurality of switching elements 202 , a plurality of word lines 203 , a plurality of bit lines 204 , and a plate line 205 are disposed in a memory cell region 301 . Such as Figure 3B As shown, in each ferroelectric capacitor 201, a bottom electrode 246, a capacitor insulating film 247, and a top electrode 248 are provided. Each of the switching elements 202 is connected to one of the ferroelectric capacitors 201...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

An embodiment of a semiconductor device includes a plate line (261...265) that is connected to the top electrodes (248) of ferroelectric capacitors (201) selected from a plurality of ferroelectric capacitors and covers the selected ferroelectric capacitors and regions between the selected ferroelectric capacitors from above.

Description

technical field [0001] The present invention relates to a semiconductor device and a method of manufacturing the same. Background technique [0002] Flash memory, EEPROM (Electrically Erasable Programmable Read Only Memory), ferroelectric memory, and other memories are examples of non-volatile memory. In flash memory and EEPROM, data is stored by storing charge in the floating gate. In ferroelectric memory, data is stored by using polarization reversal of a ferroelectric thin film. In comparison, ferroelectric memory has the advantage of being more resistant to radiation such as gamma rays, electron rays, and neutron rays than flash memory and EEPROM. [0003] However, the conventional ferroelectric memory has a problem that it is not easy to obtain a required amount of polarization charge when miniaturizing the ferroelectric capacitor. [0004] Patent Document 1: Japanese Laid-Open Patent Publication No: 03-256358. Contents of the invention [0005] An object of the p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L27/115H01L21/8247
CPCG11C11/22H01L27/11507G11C11/221H10B53/30
Inventor 佐次田直也
Owner FUJITSU SEMICON LTD