Solid-state imaging device

Abstract

According to one embodiment, in a solid-state imaging device, a signal storage portion in each of a plurality of pixels includes a first semiconductor region and a second semiconductor region. The first semiconductor region is of a first conductive type. The first semiconductor region coveres a side wall of an element isolation portion on a side of the signal storage portion. The second semiconductor region is of a second conductive type. The second conductive type is an opposite conductive type to the first conductive type. The second semiconductor region is arranged vertically in a depth direction from a deeper position than a front surface in a semiconductor substrate and extending in a plate shape along the first semiconductor region.

Description

[0001] Associate application [0002] This application enjoys the priority of the basic application based on Japanese Patent Application No. 2014-023604 (filing date: February 10, 2014). This application incorporates the entire content of the basic application by referring to this basic application. technical field [0003] This embodiment relates to a solid-state imaging device. Background technique [0004] Currently, solid-state imaging devices mainly composed of CMOS sensors are used in various applications such as digital still cameras, video cameras, and surveillance cameras. In applications such as digital cameras, video cameras, surveillance cameras, etc., the following imaging characteristics are required. That is, it is possible to capture images with a high S / N ratio when capturing images of relatively dark subjects, and it also has the output resolution of images when capturing images of sufficiently bright subjects. In this way, if the S / N ratio is good when ...

AI Technical Summary

Problems solved by technology

That is, when the area of ​​each pixel becomes smaller, light incident on the pixel tends to leak into adjacent pixels, but usually adjacent pixels are provided with color filters for obtaining different color signals, so in this case, color mixing may become larger

In addition, even if incident light does not leak to adjacent pixels, when photoelectrons are generated in the semiconductor region constituting a pixel near the boundary between pixels, the photoelectrons leak into adjacent pixels due to thermal diffusion, etc. degree may be increased for the same reason

When the degree of color mixing is large, the reproducibility of the color is reduced, so it is difficult to obtain an image with high chroma on the reproduced screen

Images