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Processing Gas Generating Apparatus, Processing Gas Generating Method, Substrate Processing Method, And Storage Medium

A technology for processing gas and generating devices, which can be used in electrical components, transportation and packaging, gaseous chemical plating, etc., and can solve problems such as concentration fluctuations

Active Publication Date: 2015-09-02
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the solvent vapor in the storage tank is cooled with nitrogen gas to lower the temperature of the liquid solvent, the solvent in the vapor returns to liquid again, which becomes a factor that causes fluctuations in the concentration of the solvent vapor supplied to the substrate.

Method used

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  • Processing Gas Generating Apparatus, Processing Gas Generating Method, Substrate Processing Method, And Storage Medium
  • Processing Gas Generating Apparatus, Processing Gas Generating Method, Substrate Processing Method, And Storage Medium
  • Processing Gas Generating Apparatus, Processing Gas Generating Method, Substrate Processing Method, And Storage Medium

Examples

Experimental program
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Embodiment 1

[0115] The conditions in the solvent container 31 when solvent vapor is generated by the solvent vapor generator 3 including the tank heating unit 34 for heating the solvent container 31 and the lid heating unit 35 for heating the lid 32 were investigated. Time-dependent changes in the temperature of the liquid-phase part and the gas-phase part.

[0116] A. Experimental conditions

[0117] 100 ml of NMP was accommodated in the solvent container 31 with an internal capacity of 200 ml, and the operation of supplying and stopping the supply of nitrogen gas at 23° C. as a carrier gas from the bubbling nozzle 33 was repeated to generate solvent vapor. The target temperature of the liquid-phase part heated by the tank heating part 34 was set to 70°C, and the target temperature of the gas-phase part heated by the cover heating part 35 was set to 73°C.

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PUM

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Abstract

The present disclosure provides an apparatus for generating a processing gas by bubbling a raw material liquid with a carrier gas. The processing gas generated by the bubbling is taken out from a vapor-phase portion above a liquid-phase portion of the raw material liquid through a taking-out unit. A first temperature adjusting unit performs a temperature adjustment of the liquid-phase portion and a second temperature adjusting unit performs a temperature adjustment of the vapor-phase portion such that the temperature of the vapor-phase portion is higher than the temperature of the liquid-phase portion.

Description

technical field [0001] The present invention relates to techniques for generating process gases for processing substrates. Background technique [0002] In the photolithography process, which is one of the semiconductor manufacturing processes, a resist is coated in a film form on the surface of a semiconductor wafer (hereinafter referred to as a wafer) as a substrate, and the obtained resist film is After exposure in a predetermined pattern, development is performed to form a resist pattern. [0003] In this photolithography process, there are minute irregularities on the surface of the resist pattern developed by the developer, and when etching is performed in the subsequent etching process, the irregularities may adversely affect the uniformity of the line width of the pattern. influences. Therefore, a smoothing process for improving the roughness (LER: Line Edge Roughness) of the resist pattern and the variation in pattern line width (LWR: Line Width Roughness) has bee...

Claims

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Application Information

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IPC IPC(8): H01L21/027G03F7/00H01L21/67
CPCB01F2215/0093B01F3/04106H01L21/67017H01L21/67248C23C16/4482C23C16/56H01L21/0201H01L21/02656C23C16/4481
Inventor 糸永将司渡边圣之
Owner TOKYO ELECTRON LTD