P-type LED structure of Al component gradual change type, and manufacturing method
A LED structure and composition gradient technology, applied in the field of optoelectronics, can solve the problems of large amount of In source, unfavorable production cost control, large lattice mismatch, etc.
Inactive Publication Date: 2015-09-30
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Problems solved by technology
However, due to the gradual change of In concentration, the hole distribution is uneven, and the optical power per unit area of the chip varies greatly.
[0010] Chinese patent document CN102487113A discloses "GaN-based LED epitaxial wafer with improved luminous efficiency and its preparation and application", which relates to a GaN-based LED epitaxial wafer with improved luminous efficiency, using P-type InGaN and P-type GaN, on the one hand using InGaN The polarization effect of GaN and GaN produces a higher carrier concentration, which does not require nitrogen annealing again; on the other hand, the surface voids generated by the multi-period repeating structure of InGaN and GaN are used to achieve surface roughening, but the lattice of this method The mismatch is large, and the quality of the prepared epiwafer is relatively poor
However, this method makes the amount of In source more, which is not conducive to the control of production cost
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[0016] Technical scheme of the present invention is as follows:
[0017] A P-type LED structure with a graded Al composition, including a substrate, a nucleation layer, a buffer layer, an N-type GaN layer, a multi-quantum well light-emitting layer, and a P-type Al from bottom to top. Y In X Ga 1-X-Y N layers; where,
[0018] The substrate is sapphire, silicon carbide;
[0019] The nucleation layer is one of a gallium nitride layer, an aluminum nitride layer or an aluminum gallium nitride layer;
[0020] The buffer layer is non-doped gallium nitride;
[0021] The multi-quantum well light-emitting layer is composed of InGaN potential well layers and GaN barrier layers alternately stacked periodically;
[0022] The p-type Al Y In X Ga 1-X-Y In the N structure, the 0≤X≤1, 0≤Y<1.
[0023] Preferably according to the present invention, the multi-quantum well light-emitting layer has 3-20 periods;
[0024] Preferably according to the present invention, the P-type Al Y In ...
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Abstract
The invention relates to a P-type LED structure of an Al component gradual change type, and a manufacturing method. The structure sequentially comprises a substrate, a nucleating layer, a buffering layer, an N-type GaN layer, a multi-quantum-well light-emitting layer and a P-type AlYInXGa1-X-YN layer from the bottom to the top. After the doping quantity of Al in the P-type AlYInXGa1-X-YN layer changes regularly, the hole concentration of a P-type GaN structure can be improved, thereby improving the external quantum efficiency. Moreover, the lattice mismatch of the obtained P-type LED structure is small, thereby substantially reducing the contact resistance and improving the quality of a P-type GaN film. The energy band distribution of the P-type AlYInXGa1-X-YN layer is changed, the blocking effect of the valence band of the P-type AlYInXGa1-X-YN layer on hole injection is weakened, and the blocking effect of the valence band of the P-type AlYInXGa1-X-YN layer on electrons is not weakened. The structure also can improve the surface roughening to some extent, enables the brightness of an LED chip to be improved by 20%, and also enables the voltage to be reduced by 0.02-0.1V.
Description
technical field [0001] The invention relates to a structure and a preparation method of a P-type LED with gradually changing Al composition, belonging to the field of optoelectronic technology. Background technique [0002] In the early 1990s, the third-generation wide-bandgap semiconductor materials represented by nitrides made a historic breakthrough. Researchers successfully prepared blue-green and ultraviolet LEDs on gallium nitride materials, making LED lighting become possible. In 1971, the first gallium nitride LED die came out. In 1994, gallium nitride HEMTs appeared blue light GaN-based diodes with high electron mobility, and gallium nitride semiconductor materials developed very rapidly. [0003] Semiconductor light-emitting diodes have the advantages of small size, ruggedness, strong controllability of light-emitting bands, high luminous efficiency, low heat loss, low light decay, energy saving, and environmental protection. Communication and other fields have a...
Claims
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Login to View More IPC IPC(8): H01L33/14H01L33/00
Inventor逯瑶王成新曲爽
OwnerSHANDONG INSPUR HUAGUANG OPTOELECTRONICS