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Sensing device and data sensing method thereof

A sensing device and sensing circuit technology, applied in information storage, static memory, instruments, etc., can solve the problems of long sensing time, non-volatile memory cell performance limitation, etc., and achieve the effect of reducing sensing time

Inactive Publication Date: 2015-10-14
EMEMORY TECH INC
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Problems solved by technology

When the sense amplifier senses the data in the non-volatile memory cell, it takes a long time to charge the bit line (bit lin) due to the cell current, so that the voltage of the sensing terminal is raised to be greater than The data sensing time required to trigger the voltage is also very long, so the performance of the non-volatile memory cells will be limited

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  • Sensing device and data sensing method thereof
  • Sensing device and data sensing method thereof
  • Sensing device and data sensing method thereof

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Embodiment Construction

[0064] Reference will now be made in detail to the preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Whenever possible, identical or similar components may be designated by identical or similar reference numerals.

[0065] Please refer to figure 1 , figure 1 is a block diagram of a sensing device 100 according to an embodiment of the present invention. The sensing device 100 includes an initialization circuit 110 , a reference current generator 120 and a sensing circuit 130 . The initialization circuit 110 is coupled to the sensing terminal SE, and the sensing terminal SE is further coupled to the memory cell 170 . The memory cell 170 can be one of the non-volatile memory cells. The initialization circuit 110 receives the pre-charge enable signal PREEN and the discharge enable signal DISEN, and the initialization circuit 110 also receives the output signal OUT fed back by the sensing circuit 130 . The initialization ci...

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Abstract

The invention provides a sensing device and a data sensing method thereof. The sensing device comprises an initialization circuit, a reference current generator and a sensing circuit, wherein the initialization circuit is coupled to a sensing terminal and is discharged from the sensing terminal to a reference ground terminal during a discharge period, and the sensing terminal is precharged to preset voltage according to an output signal during a precharging period; the reference current generator is coupled to the sensing terminal, and reference current is drawn from the sensing terminal; the sensing circuit is coupled to the sensing terminal and is used for sensing the voltage at the sensing terminal to generate the output signal; the sensing terminal receives cell current from a memory cell, and the precharging period is after the discharge period.

Description

technical field [0001] The present invention relates to a sense amplifier and its data sensing method, and more particularly to a sense amplifier and its data sensing method for reducing data sensing time. Background technique [0002] With the rapid development of semiconductor process technology, the operating voltage of integrated circuits is getting lower and lower. For non-volatile memory cells, when the operating voltage is very low (for example, operating voltage VDD=1.5V / 1.2V or 1.0V), the cell current (cell current) is the current through the sense amplifier very small. When the sense amplifier senses the data in the non-volatile memory cell, it takes a long time to charge the bit line (bit lin) due to the cell current, so that the voltage of the sensing terminal is raised to be greater than The data sensing time required to trigger the voltage is also long, so the performance of the non-volatile memory cells is limited. Contents of the invention [0003] The p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06
Inventor 王博平黄正达林俊宏
Owner EMEMORY TECH INC