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A high-temperature oxidation-resistant readout circuit lead-out electrode and its preparation method

A technology that resists high temperature oxidation and reads out circuits, and is used in circuits, electrical components, and final product manufacturing.

Active Publication Date: 2017-03-08
KUNMING INST OF PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problem of effective connection of the lead-out electrode of the readout circuit of the pyroelectric hybrid uncooled focal plane detector, the present invention provides a new lead-out electrode of the readout circuit resistant to high temperature oxidation, which solves the problem of the lead-out electrode of the readout circuit at 400 Under the high temperature of ℃, it will not be thermally oxidized, so that the lead-out electrode of the readout circuit has good conductivity, ensuring the effective electrical connection between the readout circuit and the chip

Method used

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  • A high-temperature oxidation-resistant readout circuit lead-out electrode and its preparation method
  • A high-temperature oxidation-resistant readout circuit lead-out electrode and its preparation method
  • A high-temperature oxidation-resistant readout circuit lead-out electrode and its preparation method

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Effect test

Embodiment 1

[0030] like figure 1 As shown, a preparation method of a high-temperature oxidation-resistant readout circuit lead-out electrode comprises the following steps:

[0031] Step a, readout circuit cleaning: if figure 2 As shown, after the readout circuit 1 is taped out from a silicon factory, the lead-out electrode is an Al metal layer 2 . The readout circuit 1 is used as the substrate, and it is firstly cleaned: each is washed three times with toluene, acetone, and ethanol in sequence, and the residual solution is blown dry with a nitrogen gun.

[0032] Step b, photolithography and etching electrode holes: on the readout circuit 1, apply photoresist AZ6130 at a speed of 3500 rpm for 30 seconds, the thickness of the coating is 2 μm, and the coating time is 30 seconds, and then at 80 ° C Pre-bake for 2 minutes to form a photoresist layer 6, such as image 3 shown. Use a photolithography machine to expose, use AZ300MIF developer to develop, and control the development time, so...

Embodiment 2

[0037] like figure 1 As shown, a preparation method of a high-temperature oxidation-resistant readout circuit lead-out electrode comprises the following steps:

[0038] Step a, readout circuit cleaning: if figure 2 As shown, after the readout circuit 1 is taped out from a silicon factory, the lead-out electrode is an Al metal layer 2 . The readout circuit 1 is used as the substrate, and it is firstly cleaned: each is washed three times with toluene, acetone, and ethanol in sequence, and the residual solution is blown dry with a nitrogen gun.

[0039] Step b, photolithography and etching electrode holes: on the readout circuit 1, apply photoresist AZ6130 for 30 seconds at a speed of 2500 rpm, with a coating thickness of 3 μm, and then pre-bake at 80°C for 3 minutes to form photoresist layer 6, such as image 3 shown. Use a photolithography machine to expose, use AZ300MIF developer to develop, and control the development time, so that the photoresist in the electrode hole ...

Embodiment 3

[0044] like figure 1 As shown, a preparation method of a high-temperature oxidation-resistant readout circuit lead-out electrode comprises the following steps:

[0045] Step a, readout circuit cleaning: if figure 2 As shown, after the readout circuit 1 is taped out from a silicon factory, the lead-out electrode is an Al metal layer 2 . The readout circuit 1 is used as the substrate, and it is firstly cleaned: each is washed three times with toluene, acetone, and ethanol in sequence, and the residual solution is blown dry with a nitrogen gun.

[0046] Step b, photolithography and etching electrode holes: on the readout circuit 1, apply photoresist AZ6130 at a speed of 2800 rpm for 30 seconds, with a coating thickness of 2.5 μm, and then pre-bake at 80°C for 2.5 minutes, Form a photoresist layer 6, such as image 3 shown. Use a photolithography machine to expose, use AZ300MIF developer to develop, and control the development time, so that the photoresist in the electrode h...

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Abstract

The invention relates to a lead-out electrode of a reading circuit of a pyroelectric mixed non-refrigeration focal plane detector and a preparation method of the electrode, especially to a high temperature oxidation resistant lead-out electrode, and the Al lead-out electrode of the reading circuit is prevented from thermal diffusion and oxidation in high-temperature technology. The lead-out electrode of the reading circuit is of a composite structure. A Ti or Cr metal layer, a Pa or Pt metal layer and an Au or Ti metal layer are successively prepared on the reading circuit processed by a silicon factory, and the lead-out electrode is a composite electrode of a four-layer structure. Ohmic contact with the Al electrode is realized, the composite lead-out electrode of the four-layer structure has high resistance to high temperature oxidation in the subsequent boss preparation process, the technical compatibility is higher, it is ensured that signals of the detector can be effectively read out, and the yield rate of detector assemblies is effectively improved.

Description

technical field [0001] The present invention relates to a readout circuit lead-out electrode of a pyroelectric hybrid uncooled focal plane detector and a preparation method thereof, specifically to provide a lead-out electrode capable of resisting high-temperature oxidation, which prevents the Al lead-out electrode of the readout circuit from Thermal Diffusion and Oxidation in High Temperature Processes. Background technique [0002] Pyroelectric hybrid uncooled focal plane detectors are prepared with indium pillars on the chip and readout circuit respectively, and then integrated by flip-chip interconnection. Therefore, after the readout circuit is processed from the silicon factory, it is also necessary to prepare indium pillars for flip-chip interconnection. Hybrid uncooled focal plane detectors usually use a low thermal conductivity organic material as a boss to replace part of the indium column in order to reduce the thermal conductivity, and the indium column is prepa...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224
CPCH01L31/022408H01L31/18Y02P70/50
Inventor 杨春丽胡旭姬荣斌韩福忠李京辉吴思晋汤金春张敏王冰
Owner KUNMING INST OF PHYSICS
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