Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A Broadband, High-q Active Inductor

An active inductance and wide-band technology, applied in the direction of multi-terminal pair network, etc., can solve the problems of low operating frequency, large real part loss, and low Q value of integrated active inductance, and achieve expanded operating bandwidth, large Q value, and reduced Effect of Small Zero Frequency

Active Publication Date: 2018-02-16
BEIJING UNIV OF TECH
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, most of the existing integrated active inductors have low operating frequency (<5GHz), low Q value in the high frequency band, and large real part loss. Therefore, they are mainly used in narrowband integrated circuits

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Broadband, High-q Active Inductor
  • A Broadband, High-q Active Inductor
  • A Broadband, High-q Active Inductor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0029] figure 2 An embodiment of a broadband, high-Q active inductor. Including: including: a first transconductance amplifier, a second transconductance amplifier, an active feedback resistor, a variable capacitor, a first current source, a second current source, and a shunt branch.

[0030] In the present embodiment, the first transconductance amplifier is composed of the first bipolar transistor (Q1), the first transconductance amplifier is a positive transconductance amplifier, and the second transconductance amplifier is composed of the second bipolar transistor (Q2), the third A bipolar transistor (Q3) and a fourth bipolar transistor (Q4) constitute a second bipolar transistor (Q2) and a third bipolar transistor (Q3) constitute a common emitter-common base...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention provides a wide-band, high-Q active inductor, comprising: a first transconductance amplifier, a second transconductance amplifier, an active feedback resistor, a variable capacitor, a first current source, a second current source, and a shunt branch road. The two transconductance amplifiers are connected end to end to form a gyrator, and the gyrator converts the input capacitance of the first transconductance amplifier into an equivalent inductance. The first current source provides current for the second transconductance amplifier, and the second current source provides current for the first transconductance amplifier. The present invention adopts the compound tube that the cascode structure of voltage modulation forms in negative transconductance amplifier, has increased the output impedance of amplifier and then has reduced zero point frequency, expanded bandwidth; Adopt active feedback resistor and variable capacitance, improved Quality factor Q value and equivalent inductance value and their adjustability. Through the cooperative adjustment of the gate voltage of each transistor and the capacitance value of the variable capacitor, the active inductor realizes wide frequency band, high Q value, and adjustable bandwidth and Q value.

Description

technical field [0001] The invention relates to the technical field of radio frequency integrated circuits, in particular to a wide-band, high-Q active inductor. Background technique [0002] Inductors are important components in radio frequency integrated circuits, and are widely used in various radio frequency circuits such as filters, bandpass filters, and low noise amplifiers. Usually, on-chip passive spiral inductors are used in these circuit designs, but they have low Q value, low self-resonant frequency, large area, high manufacturing cost, unfavorable integration, and non-tunable Q value and inductance value. and other defects. For this reason, it is proposed to use active devices to synthesize active inductors to replace spiral inductors to solve these problems. [0003] Active inductors are synthesized with small-sized transistors, so the size of active inductors is relatively small, and can be reduced correspondingly with the reduction of transistor size, which ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H03H11/02
Inventor 张万荣王忠俊谢红云金冬月赵彦晓黄鑫邓蔷薇
Owner BEIJING UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com