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Preparation method of phase-change memory

A phase change and memory technology, which is applied in the field of phase change memory preparation, can solve the problems of slow heating and cooling, large current flow, and difficult control.

Active Publication Date: 2015-11-25
JIANGSU ADVANCED MEMORY SEMICON CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It is known that the heater of the phase-change memory element has a large contact area with the memory element coupled to it, which will increase the defects of surface holes, and the speed of heating and cooling is also slow (the difference between high resistance and low resistance) The transition between them is not fast enough), and the relatively large amount of current required
However, the traditional technology requires a precise alignment mechanism in the manufacturing process of the heater with a small contact area, which will make the manufacturing process complicated and difficult to control, and relatively increase the cost of the phase change memory

Method used

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  • Preparation method of phase-change memory

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Embodiment Construction

[0018] A number of embodiments of the present invention will be disclosed below with the accompanying drawings. For the sake of clarity, many practical details will be described together in the following description. It should be understood, however, that these practical details should not be used to limit the invention. That is, in some embodiments of the present invention, these practical details are unnecessary. In addition, for the sake of simplifying the drawings, some known and conventional structures and elements will be shown in a simple and schematic manner in the drawings.

[0019] Please see first Figure 1A to Figure 1H , Figure 1A to Figure 1H A cross-sectional view of a phase change memory in various stages of the manufacturing process is shown in some embodiments of the present invention. Please refer to Figure 1A . Figure 1A Shows the steps of forming a heating material layer 150 on a dielectric layer 130, forming a first mask layer 160 on the heating mat...

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Abstract

The invention discloses a preparation method of a phase-change memory. The method comprises the following steps: firstly, forming a heating material layer on a dielectric layer, forming a first mask layer on the heating material layer, and then forming a second mask layer on the first mask layer; patterning the heating material layer, the first mask layer and the second mask layer to expose one side surface of the first mask layer; removing partial first mask layer from the side surface of the first mask layer to expose partial heating material layer; and after the second mask layer is removed, with the first mask layer as a shield, removing the exposed partial heating material layer to form a heater.

Description

technical field [0001] The invention relates to a preparation method of a phase change memory. Background technique [0002] Electronic products (such as mobile phones, tablet computers, and digital cameras) often have memory elements for storing data. It is known that memory devices can store information through storage nodes on the memory unit. Among them, the phase change memory utilizes the resistance state (such as high resistance value and low resistance value) of the memory element to store information. The memory device can have a material that can switch between different phases (eg, crystalline and amorphous). The different phase states make the memory cells have resistance states with different resistance values ​​for representing different values ​​of stored data. [0003] When the phase change memory cell is in operation, an electric current can be applied to increase the temperature of the memory element to change the phase state of the material. It is know...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00
Inventor 苏水金
Owner JIANGSU ADVANCED MEMORY SEMICON CO LTD