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Au-Sn alloy sputtering target material and preparation method thereof

A sputtering target, germanium alloy technology, applied in sputtering plating, metal material coating process, ion implantation plating and other directions, can solve problems such as unfavorable high performance or high uniformity AuGe film

Active Publication Date: 2015-12-09
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The usual method of preparing gold-germanium alloy sputtering targets is to cast ingots with similar specifications to the targets, and then use machine tools to directly prepare the ingots into sputtering targets. Therefore, the microstructure of the gold-germanium alloy targets obtained It is a hypoeutectic or eutectic structure in the as-cast state, which is not conducive to obtaining high performance or high uniformity AuGe film

Method used

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  • Au-Sn alloy sputtering target material and preparation method thereof
  • Au-Sn alloy sputtering target material and preparation method thereof
  • Au-Sn alloy sputtering target material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] Example 1 A gold-germanium alloy sputtering target is processed with an alloy ingot of Au-12wt.% Ge eutectic composition as a blank

[0050] process such as figure 1 As shown, the specific steps are as follows:

[0051] 1) Ingot melting and casting:

[0052] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 12.3wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 520°C and keep it warm for 30 minutes;

[0053] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 15 minutes;

[0054] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 500°C for 10 minutes. After refining, pour the alloy melt into the mold at 450°C to obtain 185×115×12mm, Au-12wt....

Embodiment 2

[0063] Example 2 A gold-germanium alloy sputtering target is processed using an alloy ingot with Au-12wt.% Ge eutectic composition as a blank

[0064] 1) Ingot melting and casting:

[0065] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 12.3wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2 Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 550°C and keep it warm for 25 minutes;

[0066] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 10 minutes;

[0067] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 550°C for 10 minutes. After refining, pour the alloy melt into the mold at 500°C to obtain 185×115×12mm, Au-12wt. Alloy ingots with %Ge eutectic composition.

[0068] 2) Remove casting def...

Embodiment 3

[0075] Example 3 A gold-germanium alloy sputtering target is processed with an alloy ingot of Au-2wt.%Ge hypoeutectic composition as a blank

[0076] 1) Ingot melting and casting:

[0077] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 2.1wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2 Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 1220°C and keep it warm for 15 minutes;

[0078] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 18 minutes;

[0079] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 1200°C for 10 minutes. After refining, pour the alloy melt into the mold at 1150°C to obtain 185×115×12mm, Au-2wt. Alloy ingots of %Ge hypoeutectic composition.

[0080] 2) Remove casting d...

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Abstract

The invention relates to an Au-Sn alloy sputtering target material and a preparation method thereof. The method comprises the following steps: 1, Au and Sn are taken as raw materials, vacuum induction melting and vacuum casting are used for casting so as to obtain an eutectic or hypo eutectic Au-Sn alloy ingot, wherein the content of Ge in the alloy ingot accounts for 2 to 12.5 wt percent, and the content of Au serves as the balance; 2, a heating furnace is used for carrying out homogenization heat treatment on the alloy ingot obtained in the step 1; the temperature of the homogenization heat treatment is 270 to 340 DEG C, and the time is 50 to 65 minutes; 3, plastic working equipment is used for carrying out hot plastic processing to the ingot in the thickness direction; 4, the blank is placed inside the heating furnace for temper heat treatment after each 1 to 2 times of processing, the temperature is 270 to 340 DEG C, and the time is 10 to 30 minutes; and 5, the step 3 and the step 4 are repeated until the required target blank dimension is obtained. The Au-Sn alloy sputtering target material obtained through the method is even in components, and has a microscopic structure mainly composed of an Au solid solution and bulks of Ge distributed in a diffused manner.

Description

technical field [0001] The invention discloses a low melting point eutectic alloy target and a preparation method thereof, in particular to a gold-germanium alloy sputtering target and a preparation method thereof, and belongs to the field of target preparation required for ohmic contact of semiconductor devices in the microelectronics industry. Background technique [0002] With the development of semiconductor devices and integrated circuits, the connotation of ohmic contact is constantly deepening. The traditional manufacturing method to obtain ohmic contact is to sequentially vapor-deposit gold and germanium on the semiconductor and perform rapid alloying treatment. The film formed by this method has problems such as poor adhesion, insufficient density, easy pilling and rough surface during alloying. , which can lead to device reliability issues. [0003] Gold-germanium alloy is a low-temperature eutectic alloy, which has high electrical conductivity, high thermal condu...

Claims

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Application Information

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IPC IPC(8): C23C14/34C22C5/02C22C1/02C22F1/14
Inventor 张涛李勇军王兴权万小勇张巧霞陈明贾存锋曾浩王越
Owner GRIKIN ADVANCED MATERIALS