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Gold-germanium alloy sputtering target and preparation method thereof
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A technology for sputtering target material and germanium alloy
Active Publication Date: 2018-04-10
GRIKIN ADVANCED MATERIALS
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The usual method of preparing gold-germanium alloy sputtering targets is to cast ingots with similar specifications to the targets, and then use machine tools to directly prepare the ingots into sputtering targets. Therefore, the microstructure of the gold-germanium alloy targets obtained It is a hypoeutectic or eutectic structure in the as-cast state, which is not conducive to obtaining high performance or high uniformity AuGe film
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Embodiment 1
[0049] Example 1 Processing gold-germanium alloy sputtering target with Au-12wt.% Ge eutectic alloy ingot as blank
[0050] process such as figure 1 As shown, the specific steps are as follows:
[0052] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 12.3wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 520°C and keep it warm for 30 minutes;
[0053] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 15 minutes;
[0054] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 500°C for 10 minutes. After refining, pour the alloy melt into the mold at 450°C to obtain 185×115×12mm, Au-12wt. Alloy ingots with %Ge ...
Embodiment 2
[0063] Example 2 Processing gold-germanium alloy sputtering target with Au-12wt.% Ge eutectic alloy ingot as blank
[0065] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 12.3wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2 Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 550°C and keep it warm for 25 minutes;
[0066] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 10 minutes;
[0067] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 550°C for 10 minutes. After refining, pour the alloy melt into the mold at 500°C to obtain 185×115×12mm, Au-12wt. Alloy ingots with %Ge eutectic composition.
[0068] 2) Remove casting defects such as risers, shrink...
Embodiment 3
[0075] Example 3 Processing Au-germanium AlloySputtering Target Using Au-2wt.% Ge Alloy Ingot with Hypoeutectic Composition as Blank
[0076] 1) Ingot melting and casting:
[0077] I. the germanium raw material that purity is 99.99% (4N) gold and purity is 99.999% (5N) carries out batching according to Ge content 2.1wt.%, then places the crucible in the vacuum induction furnace chamber, treats that vacuum degree remains on * 10 -1 ~×10 -2 Pa, heat the raw materials, and after they are all melted, raise the temperature of the melt to 1220°C and keep it warm for 15 minutes;
[0078] II. Stop heating after step I is completed, and the melt begins to solidify and degas for 18 minutes;
[0079] III. After solidification and degassing, repeat step I to obtain the melt and refine it at 1200°C for 10 minutes. After refining, pour the alloy melt into the mold at 1150°C to obtain 185×115×12mm, Au-2wt. Alloy ingots of %Ge hypoeutectic composition.
[0080] 2) Remove casting defects ...
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Abstract
A gold-germaniumalloysputtering target and a preparation method thereof, the method comprising the following steps: 1. Using gold and germanium metals as raw materials, using vacuum induction melting and vacuum casting to obtain gold-germaniumalloy castings with eutectic or hypoeutectic components Ingot; wherein, the germanium content in the alloyingot is 2wt.%~12.5wt.%, and the balance is gold; 2. Utilize the heating furnace to carry out homogenization heat treatment to the alloy ingot obtained in step 1; the homogenization heat treatment temperature is 270~ 340°C, the time is 50-65min; 3. Use plastic processing equipment to carry out thermoplasticprocessing of the ingot along the thickness direction; 4. After completing 1-2 passes, temper the billet in the heating furnace for heat treatment at a temperature of 270-340 ℃, the time is 10-30min; 5. Repeat steps 3 and 4 until the required target blank size. The composition of the gold-germanium alloy sputtering target obtained by this method is uniform, and the microstructure is mainly composed of Au solid solution and dispersed bulk Ge phase.
Description
technical field [0001] The invention discloses a low melting point eutectic alloy target and a preparation method thereof, in particular to a gold-germanium alloy sputtering target and a preparation method thereof, and belongs to the field of target preparation required for ohmic contact of semiconductor devices in the microelectronics industry. Background technique [0002] With the development of semiconductor devices and integrated circuits, the connotation of ohmic contact is constantly deepening. The traditional manufacturing method to obtain ohmic contact is to sequentially vapor-deposit gold and germanium on the semiconductor and perform rapid alloying treatment. The film formed by this method has problems such as poor adhesion, insufficient density, easy pilling and rough surface during alloying. , which can lead to device reliability issues. [0003] Gold-germanium alloy is a low-temperature eutectic alloy, which has high electrical conductivity, high thermal condu...
Claims
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